SI6473DQ-T1-E3 Vishay, SI6473DQ-T1-E3 Datasheet
SI6473DQ-T1-E3
Specifications of SI6473DQ-T1-E3
Related parts for SI6473DQ-T1-E3
SI6473DQ-T1-E3 Summary of contents
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... ° ° ° stg Symbol t ≤ thJA Steady State R Steady State thJF Si6475DQ Vishay Siliconix ® Power MOSFETs S* * Source Pins and 7 must be tied common Steady State Unit - 12 ± 7 6 1.5 - 0.95 1.75 1.08 1.14 0. 150 Typical Maximum Unit 115 °C www ...
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... Si6475DQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71294 S-81056-Rev. B, 12-May-08 10000 8000 6000 4000 2000 °C J 0.8 1.0 1.2 Si6475DQ Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1.0 0.8 0 100 T - Junction Temperature (° ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71294. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...