SI7160DP-T1-E3 Vishay

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SI7160DP-T1-E3

Manufacturer Part Number
SI7160DP-T1-E3
Description
N-CH 30-V (D-S) MOSFET W/SCHOTTKY DIODE
Manufacturer
Vishay

Specifications of SI7160DP-T1-E3

Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0087 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
17.8 A
Power Dissipation
5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

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