SI7326DN-T1-E3 Vishay, SI7326DN-T1-E3 Datasheet

SI7326DN-T1-E3

Manufacturer Part Number

SI7326DN-T1-E3

Description

N-CH 30-V (D-S) FAST SWITCHING MOSFE

Manufacturer

Vishay

Datasheets

1.SI7326DN.pdf (6 pages)

2.SI7326DN-T1-E3.pdf (12 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7326DN-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

H&T Electronics

Part Number:

SI7326DN-T1-E3

Quantity:

1 380

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Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

b. See Solder Profile (

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is

not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 74444

S-62439-Rev. A, 27-Nov-06

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Single Pulse Avalanche Current

Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

Ordering Information: Si7326DN-T1-E3 (Lead (Pb)-free)

(V)

3.30 mm

N-Channel 30-V (D-S) Fast Switching MOSFET

ttp://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

0.0195 at V

0.030 at V

PowerPAK 1212-8

Bottom View

DS(on)

= 150 °C)

(Ω)

= 4.5 V

= 10 V

3.30 mm

b, c

= 25 °C, unless otherwise noted

Steady State

(A)

L = 0.1 mH

t ≤ 10 sec

= 25 °C

= 70 °C

= 25 °C

= 70 °C

FEATURES

APPLICATIONS

• TrenchFET

• New Low Thermal Resistance PowerPAK

• 100 % R

• DC/DC Conversion

Symbol

Package with Low 1.07 mm Profile

, T

N-Channel MOSFET

thJA

thJC

stg

Tested

Power MOSFET

Typical

10 sec

7.5

2.9

3.5

1.9

4.5

- 55 to 150

± 20

260

Steady State

Maximum

6.5

5.0

1.2

1.5

0.8

6.0

Vishay Siliconix

Si7326DN

www.vishay.com

°C/W

Unit

°C

RoHS

COMPLIANT

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