SI8405DB-T1-E1 Vishay, SI8405DB-T1-E1 Datasheet

TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,3.6A I(D),BGA

SI8405DB-T1-E1

Manufacturer Part Number
SI8405DB-T1-E1
Description
TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,3.6A I(D),BGA
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI8405DB-T1-E1

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
55 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 4.5V
Power - Max
1.47W
Mounting Type
Surface Mount
Package / Case
4-MICRO FOOT®CSP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI8405DB-T1-E1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8405DB-T1-E1
Manufacturer:
VISHAY
Quantity:
108
Part Number:
SI8405DB-T1-E1
Manufacturer:
AD
Quantity:
22 693
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
Document Number: 71814
S-82118-Rev. E, 08-Sep-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Package Reflow Conditions
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (drain)
V
DS
- 12
(V)
3
4
Device Marking: 8405
Ordering Information: Si8405DB-T1-E1 (Lead (Pb)-free)
Bump Side View
D
S
0.055 at V
0.070 at V
0.090 at V
D
G
R
xxx = Date/Lot Traceability Code
MICRO FOOT
2
1
DS(on)
b
J
a
= 150 °C)
12-V P-Channel 1.8-V (G-S) MOSFET
a
GS
GS
GS
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
Backside View
a
8405
xxx
a
A
I
= 25 °C, unless otherwise noted
- 4.9
- 4.4
- 4.0
D
IR/Convection
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• MICRO FOOT
• PA, Battery and Load Switch
• Battery Charger Switch
G
Symbol
Symbol
T
R
R
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
J
V
V
I
P
, T
I
DM
thJA
I
thJF
DS
GS
P-Channel MOSFET
D
S
D
stg
S
D
®
Power MOSFET
Typical
®
- 4.9
- 3.9
- 2.5
2.77
1.77
5 s
Chipscale Packaging
35
72
16
- 55 to 150
- 12
- 10
260
± 8
Steady State
Maximum
- 3.6
- 2.8
- 1.3
1.47
0.94
45
85
20
Vishay Siliconix
Si8405DB
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI8405DB-T1-E1 Summary of contents

Page 1

... Bump Side View Backside View Device Marking: 8405 xxx = Date/Lot Traceability Code Ordering Information: Si8405DB-T1-E1 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si8405DB Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... J 1 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71814 S-82118-Rev. E, 08-Sep °C J 0.8 1.0 1.2 Si8405DB Vishay Siliconix 2000 1600 C iss 1200 800 C oss C 400 rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1 ...

Page 4

... Si8405DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... S-82118-Rev. E, 08-Sep-08 4 0.30 0.31 Note 3 Solder Mask 0. Diamerter E a Millimeters Max. 0.650 0.290 0.360 0.410 1.600 1.600 0.850 0.380 Si8405DB Vishay Siliconix Silicon Bump Note Inches Min. Max. 0.0236 0.0256 0.0102 0.0114 0.0134 0.0142 0.0146 0.0161 0.0598 0.0630 0.0598 0.0630 0.0295 ...

Page 6

... PCB Design and Assembly Guidelines For MICRO FOOTr Products Johnson Zhao INTRODUCTION Vishay Siliconix’s MICRO FOOT product family is based on a wafer-level chip-scale packaging (WL-CSP) technology that implements a solder bump process to eliminate the need for an outer package to encase the silicon die. MICRO FOOT products include power MOSFETs, analog switches, and power ICs ...

Page 7

... BOARD LAYOUT GUIDELINES Board materials. Vishay Siliconix MICRO FOOT products are designed to be reliable on most board types, including organic boards such as FR-4 or polyamide boards. The package qualification information is based on the test on 0.5-oz. FR-4 and polyamide boards with NSMD pad design ...

Page 8

... Use a vacuum needle pick-up tip to pick up the replacement part, and use a placement jig to placed it accurately. 6. Reflow the part using the same convection nozzle, and preheat from the bottom, matching the original reflow profile. Vishay Siliconix Thermal Profile 0 100 200 300 Time (Seconds FIGURE 6 ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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