SKM150GB12T4G SEMIKRON, SKM150GB12T4G Datasheet
Manufacturer Part Number
SKM150GB12T4G
Description
IGBT 4 Fast (Trench)
Specifications of SKM150GB12T4G
Family/system
SEMITRANS
Voltage (v)
1200
Current (a)
150
Chip-type
IGBT 4 Fast (Trench)
Available stocks
Part Number:
SKM150GB12T4G
Part Number:
SKM150GB12T4G
SKM150GB12T4G
Fast IGBT4 Modules
SKM150GB12T4G
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
• High short circuit capability, self
• Soft switching 4. Generation CAL
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
© by SEMIKRON
SEMITRANS
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
coefficient
limiting to 6 x I
diode (CAL4)
CNOM
GB
®
3
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 0 – 19.02.2009
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
V
R
R
di/dt
di/dt
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 150 A
= 25 °C
= 150 A
=V
= 1200 V
= 25 V
on
off
= 800 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= ±15 V
= 3xI
= 3xI
≤ 1200 V
= 1 Ω
= 1 Ω
= 4400 A/µs
= 1800 A/µs
CE
, I
Fnom
Cnom
C
= 6 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 150 °C
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
4000
typ.
1.85
2.25
10.3
0.58
0.47
18.7
14.1
223
172
150
450
183
137
150
450
774
500
850
175
400
0.8
0.7
7.0
5.8
0.1
8.8
5.0
10
38
78
max.
2.45
11.0
2.1
0.9
0.8
8.0
6.5
0.3
0.2
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
Ω
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
Related parts for SKM150GB12T4G
SKM150GB12T4G Summary of contents
... SKM150GB12T4G ® SEMITRANS 3 Fast IGBT4 Modules SKM150GB12T4G Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw kHz Remarks • ...
... SKM150GB12T4G ® SEMITRANS 3 Fast IGBT4 Modules SKM150GB12T4G Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw kHz Remarks • ...
... SKM150GB12T4G Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 0 – 19.02.2009 = ...
... SKM150GB12T4G Fig. 7: Typ. switching times vs. I Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: CAL diode forward characteristic Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 0 – 19.02.2009 G © by SEMIKRON ...
... SKM150GB12T4G Semitrans 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 0 – 19.02.2009 5 ...
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