SKM200GB12E4 SEMIKRON, SKM200GB12E4 Datasheet

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SKM200GB12E4

Manufacturer Part Number
SKM200GB12E4
Description
IGBT 4 (Trench)
Manufacturer
SEMIKRON
Datasheet

Specifications of SKM200GB12E4

Family/system
SEMITRANS
Voltage (v)
1200
Current (a)
200
Chip-type
IGBT 4 (Trench)
Case
SEMITRANS 3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SKM200GB12E4
Manufacturer:
AUDI
Quantity:
154
Part Number:
SKM200GB12E4
Manufacturer:
SEMIKRON
Quantity:
20 000
SKM200GB12E4
IGBT4 Modules
SKM200GB12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
• High short circuit capability, self
• Soft switching 4. Generation CAL
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
© by SEMIKRON
SEMITRANS
T
T
rel. results valid for T
coefficient
limiting to 6 x I
diode (CAL4)
c
op
= 125°C max, recomm.
= -40 ... +150°C, product
CNOM
GB
j
®
= 150°
3
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 2 – 16.06.2009
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
V
R
R
di/dt
di/dt
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 200 A
= 25 °C
= 200 A
=V
= 1200 V
= 25 V
on
off
= 800 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= ±15 V
= 3xI
= 3xI
≤ 1200 V
= 1 Ω
= 1 Ω
= 5500 A/µs
= 2300 A/µs
CE
, I
Fnom
Cnom
C
= 7.6 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 150 °C
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
4000
1130
typ.
12.3
0.81
0.69
314
242
200
600
229
172
200
600
990
500
204
490
107
1.8
2.2
0.8
0.7
5.0
7.5
5.8
0.1
3.8
10
40
21
27
max.
2.05
0.14
2.4
0.9
0.8
5.8
8.0
6.5
0.3
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1

Related parts for SKM200GB12E4

SKM200GB12E4 Summary of contents

Page 1

... SKM200GB12E4 ® SEMITRANS 3 IGBT4 Modules SKM200GB12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw kHz Remarks • ...

Page 2

... SKM200GB12E4 ® SEMITRANS 3 IGBT4 Modules SKM200GB12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw kHz Remarks • ...

Page 3

... SKM200GB12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 16.06.2009 = ...

Page 4

... SKM200GB12E4 Fig. 7: Typ. switching times vs. I Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: CAL diode forward characteristic Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 2 – 16.06.2009 G © by SEMIKRON ...

Page 5

... SKM200GB12E4 Semitrans 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 16.06.2009 5 ...

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