SUM110P06-08L-E3 Vishay

SUM110P06-08L-E3

Manufacturer Part Number

SUM110P06-08L-E3

Description

TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,110A I(D),TO-263AB

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SUM110P06-08L-E3

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

110A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

240nC @ 10V

Input Capacitance (ciss) @ Vds

9200pF @ 25V

Power - Max

3.75W

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 leads + Tab), TO-263AB

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.008 Ohms

Drain-source Breakdown Voltage

- 60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

110 A

Power Dissipation

3.75 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SUM110P06-08L-E3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SUM110P06-08L-E3

Manufacturer:

VISHAY

Quantity:

15 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SUM110P06-08L-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

SUM110P06-08L-E3

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