TSFF6210 Vishay, TSFF6210 Datasheet
TSFF6210
Specifications of TSFF6210
Related parts for TSFF6210
TSFF6210 Summary of contents
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... High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF6210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSFF6210 180 Note Test conditions see table “Basic Characteristics” ...
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... TSFF6210 Vishay Semiconductors 200 180 160 140 120 R = 230 K/W thJA 100 100 T - Ambient Temperature (°C) 21142 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...
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... GaAlAs Double Hetero T < 50 °C amb 0.05 0.1 0.2 0.5 10 100 3 4 Fig Relative Radiant Intensity vs. Angular Displacement 1000 emittertechsupport@vishay.com TSFF6210 Vishay Semiconductors 1.25 1.0 0.75 0.5 0.25 0 780 880 λ - Wavelength (nm) 95 9886 Fig Relative Radiant Power vs. Wavelength 0° 10° ...
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... TSFF6210 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A + 0.15 0.5 - 0.05 6.544-5259.09-4 Issue: 4; 19.05.09 20161 www.vishay.com For technical questions, contact: 4 High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero C + 0.2 0.6 - 0.1 2.54 nom. emittertechsupport@vishay.com R2.49 (sphere) Area not plane Ø 5 ± 0. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...