TCET1117 Vishay, TCET1117 Datasheet

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TCET1117

Manufacturer Part Number
TCET1117
Description
OPTOCOUPLER, PHOTOTRANSISTOR, 5000VRMS
Manufacturer
Vishay
Datasheet

Specifications of TCET1117

No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
4
Ctr Max
160%
Isolation Voltage
5kV
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.3 V
Current Transfer Ratio
160 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
265 mW
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TCET1110, TCET1110G
Vishay Semiconductors
DESCRIPTION
The TCET1110, TCET1110G consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin plastic dual inline package.
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI: EN 60065:2002, EN 60950:2000
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO
www.vishay.com
818
Optocoupler, Phototransistor Output, High Temperature, 110 °C,
17197_4
For technical questions, contact:
17197_5
C
C
A
4
1
C
3
E
2
D E
V
Rated
optocoupleranswers@vishay.com
FEATURES
• CTR offered in 9 groups
• Isolation materials according to UL 94 V-O
• Pollution degree 2
• Climatic classification 55/100/21
• Special construction: therefore, extra low coupling capacity
• Low temperature coefficient of CTR
• Temperature range - 40 °C to + 110 °C
• Rated
• Isolation test voltage (partial discharge test voltage)
• Rated
• Rated
• Creepage current resistance according to VDE 0303/
• Thickness through insulation ≥ 4 mm
• External creepage distance > 8 mm
• Compliant to RoHS directive 2002/95/EC and in
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage ≤ 300 V
• for appl. class I - III at mains voltage ≤ 600 V according to
(DIN/VDE 0110/resp. IEC 60664)
(IEC 60068 part 1)
of typical 0.2 pF, high common mode rejection
V
V
V
V
IEC 60112 comparative tracking index: CTI ≥ 175
accordance to WEEE 2002/96/EC
DIN EN 60747-5-5 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
IOTM
pd
IOWM
IORM
= 1.6 kV
= 6 kV
= 848 V
= 600 V
isolation
impulse
recurring
peak
peak
RMS
voltage
voltage
peak
(transient
(RMS
Document Number: 83546
voltage
Rev. 1.9, 14-Oct-09
includes
overvoltage)
(repetitive)
DC)

Related parts for TCET1117

TCET1117 Summary of contents

Page 1

... TCET1110, TCET1110G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C, C 17197_5 17197_4 DESCRIPTION The TCET1110, TCET1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode pin plastic dual inline package. AGENCY APPROVALS • UL1577, file no. E52744, double protection • BSI: EN 60065:2002, EN 60950:2000 • ...

Page 2

... TCET1114 TCET1115 TCET1116 TCET1117 TCET1118 TCET1119 TCET1110G TCET1111G TCET1112G TCET1113G TCET1114G TCET1115G TCET1116G TCET1117G TCET1118G TCET1119G Note 4 pin = single channel G = lead form 10.16 mm not marked on the body ABSOLUTE MAXIMUM RATINGS PARAMETER INPUT Reverse voltage Forward current Forward surge current OUTPUT Collector emitter voltage ...

Page 3

... The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal Characteristics of Optocouplers” application note. ...

Page 4

... High Temperature, 110 °C, Rated PART SYMBOL TCET1111 TCET1111G TCET1112 TCET1112G = TCET1113 TCET1113G TCET1114 TCET1114G TCET1110 TCET1110G TCET1115 TCET1115G TCET1116 TCET1116G = TCET1117 TCET1117G TCET1118 TCET1118G TCET1119 TCET1119G TCET1111 TCET1111G TCET1112 TCET1112G = TCET1113 TCET1113G TCET1114 TCET1114G TEST CONDITION SYMBOL diss V IOTM T si ...

Page 5

... TCET1110, TCET1110G Vishay Semiconductors 300 Phototransistor 250 P (mW) si 200 150 100 IR-diode 50 I (mA 100 T - Safety Temperature (°C) 94 9182 si Fig Derating Diagram SWITCHING CHARACTERISTICS PARAMETER Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Ω ...

Page 6

... Storage time Fall time + t ) Turn-off time 11698 100 120 16737 1.6 2.0 16738 Fig Collector Dark Current vs. Ambient Temperature optocoupleranswers@vishay.com TCET1110, TCET1110G Vishay Semiconductors 1 0.6 0.4 0 100 120 T - Ambient Temperature (°C) amb Fig Relative Current Transfer Ratio vs. ...

Page 7

... TCET1110, TCET1110G Vishay Semiconductors 100 0.1 0.01 0 Forward Current (mA) 95 11027 F Fig Collector Current vs. Forward Current 100 0.1 0 Collector Emitter Voltage (V) 95 10985 CE Fig Collector Current vs. Collector Emitter Voltage 1 used 0.8 CTR = 50 % used 0.6 0.4 0 used Collector Current (mA) 95 11028 C Fig Collector Emitter Saturation Voltage vs. ...

Page 8

... TCET1110G type 7.62 typ. 4.5 ± 0.3 2.55 ± 0.25 10.16 typ. 20802-8 ET1110 V YWW 24 21764-26 optocoupleranswers@vishay.com TCET1110, TCET1110G Vishay Semiconductors 7.62 typ. 2.8 ± 0.5 0.25 typ. www.vishay.com 825 ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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