VTB5051UVJH EXCELITAS TECH, VTB5051UVJH Datasheet
VTB5051UVJH
Manufacturer Part Number
VTB5051UVJH
Description
Photo Diode
Manufacturer
EXCELITAS TECH
Datasheet
1.VTB5051UVJH.pdf
(1 pages)
Specifications of VTB5051UVJH
Wavelength Typ
920nm
Sensitivity
0.1A/W
Half Angle
50°
Dark Current
250pA
Diode Case Style
TO-5
No. Of Pins
3
Operating Temperature Range
-40°C To +110°C
Peak Reflow Compatible (260 C)
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PRODUCT DESCRIPTION
Planar silicon photodiode in a three lead TO-5
package with a UV transmitting “flat” window.
Chip is isolated from the case. The third lead
allows case to be grounded. These diodes have
very high shunt resistance and have good blue
response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
VTB Process Photodiodes
TC V
TC R
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7
TC I
NEP
V
R
V
I
range
C
S
S
D*
SC
I
OC
SH
BR
1/2
D
R
R
p
J
SC
OC
SH
Short Circuit Current
I
Open Circuit Voltage
V
Dark Current
Shunt Resistance
R
Junction Capacitance
Sensitivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
SC
OC
SH
Temperature Coefficient
Temperature Coefficient
Temperature Coefficient
CHARACTERISTIC
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = -10 mV
H = 0, V = -10 mV
H = 0, V = 0
365 nm
220 nm
TEST CONDITIONS
RoHS Compliant
PACKAGE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
33
(See also VTB curves, pages 21-22)
Phone: 877-734-6786 Fax: 450-424-3413
Min.
.038
200
85
2
CHIP ACTIVE AREA: .023 in
CASE 14A TO-5 HERMETIC
1.8 x 10
2.1 x 10
VTB5051UVJH
inch (mm)
Typ.
130
490
-2.0
-8.0
920
±50
.12
.56
3.0
0.1
40
-14
VTB5051UVJH
13
(Typ.)
(Typ.)
2
-40°C to 110°C
-40°C to 110°C
(14.8 mm
Max.
1100
250
.23
www.perkinelmer.com/opto
2
)
cm Hz W
W
Degrees
UNITS
mV/°C
%/°C
%/°C
G
A/W
A/W
mV
nm
nm
µA
pA
nF
V
Hz
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