TCET1110G Vishay, TCET1110G Datasheet

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TCET1110G

Manufacturer Part Number
TCET1110G
Description
Optocoupler
Manufacturer
Vishay
Datasheet

Specifications of TCET1110G

Leaded Process Compatible
Yes
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.3 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
265 mW
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TCET1110, TCET1110G
Vishay Semiconductors
DESCRIPTION
The TCET1110, TCET1110G consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin plastic dual inline package.
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI: EN 60065:2002, EN 60950:2000
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO
www.vishay.com
818
Optocoupler, Phototransistor Output, High Temperature, 110 °C,
17197_4
For technical questions, contact:
17197_5
C
C
A
4
1
C
3
E
2
D E
V
Rated
optocoupleranswers@vishay.com
FEATURES
• CTR offered in 9 groups
• Isolation materials according to UL 94 V-O
• Pollution degree 2
• Climatic classification 55/100/21
• Special construction: therefore, extra low coupling capacity
• Low temperature coefficient of CTR
• Temperature range - 40 °C to + 110 °C
• Rated
• Isolation test voltage (partial discharge test voltage)
• Rated
• Rated
• Creepage current resistance according to VDE 0303/
• Thickness through insulation ≥ 4 mm
• External creepage distance > 8 mm
• Compliant to RoHS directive 2002/95/EC and in
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage ≤ 300 V
• for appl. class I - III at mains voltage ≤ 600 V according to
(DIN/VDE 0110/resp. IEC 60664)
(IEC 60068 part 1)
of typical 0.2 pF, high common mode rejection
V
V
V
V
IEC 60112 comparative tracking index: CTI ≥ 175
accordance to WEEE 2002/96/EC
DIN EN 60747-5-5 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
IOTM
pd
IOWM
IORM
= 1.6 kV
= 6 kV
= 848 V
= 600 V
isolation
impulse
recurring
peak
peak
RMS
voltage
voltage
peak
(transient
(RMS
Document Number: 83546
voltage
Rev. 1.9, 14-Oct-09
includes
overvoltage)
(repetitive)
DC)

Related parts for TCET1110G

TCET1110G Summary of contents

Page 1

... Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C, C 17197_5 17197_4 DESCRIPTION The TCET1110, TCET1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode pin plastic dual inline package. AGENCY APPROVALS • UL1577, file no. E52744, double protection • BSI: EN 60065:2002, EN 60950:2000 • ...

Page 2

... min V T amb from case, ≤ optocoupleranswers@vishay.com TCET1110, TCET1110G Vishay Semiconductors REMARKS CTR 50 to 600 %, DIP-4 CTR DIP-4 CTR 125 %, DIP-4 CTR 100 % to 200 %, DIP-4 CTR 160 % to 320 %, DIP-4 CTR 150 %, DIP-4 CTR 100 % to 300 %, DIP-4 CTR 160 %, DIP-4 CTR 130 % to 260 %, DIP-4 ...

Page 3

... TCET1110, TCET1110G Vishay Semiconductors THERMAL CHARACTERISTICS PARAMETER LED power dissipation Output power dissipation Maximum LED junction temperature Maximum output die junction temperature Thermal resistance, junction emitter to board Thermal resistance, junction emitter to case Thermal resistance, junction detector to board Thermal resistance, junction detector to case ...

Page 4

... IOTM Tr test (see figure 500 500 100 °C R amb IO = 500 150 °C amb R IO (construction test only) optocoupleranswers@vishay.com TCET1110, TCET1110G Vishay Semiconductors MIN. TYP. MAX. CTR 13 30 CTR 22 45 CTR 34 70 CTR 56 90 CTR 50 600 CTR 50 150 CTR 100 300 CTR ...

Page 5

... TCET1110, TCET1110G Vishay Semiconductors 300 Phototransistor 250 P (mW) si 200 150 100 IR-diode 50 I (mA 100 T - Safety Temperature (°C) 94 9182 si Fig Derating Diagram SWITCHING CHARACTERISTICS PARAMETER Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Ω ...

Page 6

... Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated off Storage time Fall time + t ) Turn-off time 11698 100 120 16737 1.6 2.0 16738 Fig Collector Dark Current vs. Ambient Temperature optocoupleranswers@vishay.com TCET1110, TCET1110G Vishay Semiconductors 1 0.6 0.4 0 100 120 T - Ambient Temperature (°C) amb Fig ...

Page 7

... TCET1110, TCET1110G Vishay Semiconductors 100 0.1 0.01 0 Forward Current (mA) 95 11027 F Fig Collector Current vs. Forward Current 100 0.1 0 Collector Emitter Voltage (V) 95 10985 CE Fig Collector Current vs. Collector Emitter Voltage 1 used 0.8 CTR = 50 % used 0.6 0.4 0 used Collector Current (mA) 95 11028 C Fig Collector Emitter Saturation Voltage vs. ...

Page 8

... TCET1110G type 7.62 typ. 4.5 ± 0.3 2.55 ± 0.25 10.16 typ. 20802-8 ET1110 V YWW 24 21764-26 optocoupleranswers@vishay.com TCET1110, TCET1110G Vishay Semiconductors 7.62 typ. 2.8 ± 0.5 0.25 typ. www.vishay.com 825 ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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