OP501DA Optek, OP501DA Datasheet

Photodetector Transistors Photo Darlington

OP501DA

Manufacturer Part Number
OP501DA
Description
Photodetector Transistors Photo Darlington
Manufacturer
Optek
Type
NPN Silicon Photo Darlington with Opaque Lensr
Datasheet

Specifications of OP501DA

Maximum Power Dissipation
100 mW
Maximum Dark Current
100 nA
Collector- Emitter Voltage Vceo Max
35 V
Collector-emitter Breakdown Voltage
35 V
Collector-emitter Saturation Voltage
1 V
Fall Time
60 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Rise Time
60 us
Package / Case
SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
Features:
Description:
Each of these devices consists of a NPN silicon phototransistor mounted in a miniature SMT package with a 0805
size chip carrier that is compatible with most automated mounting and position sensing equipment.
Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA has an opaque lens that
shields the device from stray light, whereas OP500 and OP500DA has a water clear lens. All devices have a
wide viewing acceptance angle and higher collector current than devices without lenses especially on the
OP500DA and OP501 which incorporate photo darlington die instead on the standard transistor.
OP500, OP501, OP500DA and OP501DA are mechanically and spectrally matched to the OP200 series infrared
LEDs.
Applications:
RoHS
High photo sensitivity
Fast response time
0805 package size
Phototransistor or Photo Darlington Output
Choice of opaque or water clear flat lens
Non-contact position sensing
Datum detection
Machine automation
Optical encoders
Moisture
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
2a
OP500, OP501, OP500DA, OP501DA
COLLECTOR
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
SENSOR
DICE
Part Number
OP500DA
OP501DA
OP500
OP501
Recommended Solder Pad Patterns
Photo Darlington
Phototransistor
Ordering Information
Sensor
OP501,DA
OP500
OP501
Viewing Angle
1
2
Pin # Transistor
1
2
150°
150°
OP500,DA
Collector
Emitter
Issue A.4
Lead Length
OP500DA
OP501DA
Page 1 of 5
N/A
1
2
02/09

Related parts for OP501DA

OP501DA Summary of contents

Page 1

... Both OP500, OP500DA and OP501, OP501DA have a flat lens. OP501 and OP501DA has an opaque lens that shields the device from stray light, whereas OP500 and OP500DA has a water clear lens. All devices have a wide viewing acceptance angle and higher collector current than devices without lenses especially on the OP500DA and OP501 which incorporate photo darlington die instead on the standard transistor ...

Page 2

... Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Absolute Maximum Ratings Storage Temperature Range Operating Temperature Range (1) Lead Soldering Temperature Collector-Emitter Voltage OP500, OP501 OP500DA, OP501DA Emitter-Collector Voltage Collector Current OP500, OP501 OP500DA, OP501DA (2) Power Dissipation ...

Page 3

... Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Collector-Emitter Dark Current vs. Temperature-T 1000 2 Conditions mW/ 10V CE 100 -25 Temperature—(°C) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. ...

Page 4

... Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Relative On-State Collector Current vs. Irradiance—Ee (mW/cm 160% 2 Normalized 5mW/cm e Conditions 5V, CE λ = 935nm °C 140% A 120% 100% 80% 60% 40% 20% 1.0 2.0 3.0 4.0 0 Ee—Irradiance (mW/cm Collector-Emitter Dark Current vs ...

Page 5

... Silicon Phototransistor and Photo Darlington in Miniature 0805 SMD Package OP500, OP501, OP500DA, OP501DA Relative On-State Collector Current vs. Irradiance—Ee (mW/cm 2 Normalized 1mW/cm e Conditions 5V, CE λ = 935nm °C 160% A 140% 120% 100% 80% 60% 40% 0.50 1.0 0 Irradiance- Ee(mW/cm OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. ...

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