AD100-8-S1 Pacific Silicon Sensor, AD100-8-S1 Datasheet

Photodiodes High Speed Si APD 100um Active Area

AD100-8-S1

Manufacturer Part Number
AD100-8-S1
Description
Photodiodes High Speed Si APD 100um Active Area
Manufacturer
Pacific Silicon Sensor
Type
Silicon Avalanche Photodiodesr
Datasheet

Specifications of AD100-8-S1

Photodiode Material
Silicon
Peak Wavelength
780 nm
Maximum Power Dissipation
100 mW
Maximum Dark Current
100 pA
Maximum Rise Time
180 ps
Package / Case
TO-52-S1
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
- 20 C
Mounting Style
Through Hole
Product
Ambient Light Sensor
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
06-035
FEATURES
• ∅ 100 µm active area
• High gain at low bias voltage
• Fast rise time
• Low capacitance
ELECTRO-OPTICAL CHARACTERISTICS @ 22 °C
* Measurement conditions: Setup of photo current 50 pA at M = 1 and irradiated by a 680 nm, 60 nm bandwidth LED. Increase the photo
8/23/2010
ABSOLUTE MAXIMUM RATING
SYMBOL
current up to 5.0 nA, (M = 100) by internal multiplication due to an increasing bias voltage.
T
I
I
SOLDERING
PH
PH
SYMBOL
T
T
(DC)
STG
(AC)
OP
∆ƒ
NEP
V
I
C
t
D
BR
3dB
r
PARAMETER
Storage Temp
Operating Temp
Soldering Temp
10 seconds
Electrical Power
Dissipation @ 22°C
Optical Peak Value,
once for 1 second
Continuous Optical
Operation
Pulsed Signal Input
50 µs “on” / 1 ms “off”
CHARACTERISTIC
Dark Current
Capacitance
Breakdown Voltage
Temperature Coefficient of V
Responsivity
Bandwidth
Rise Time
Optimum Gain
“Excess Noise” factor
“Excess Noise” index
Noise Current
Max Gain
Noise Equivalent Power
DESCRIPTION
0.00785 mm
Photodiode with N on P construction. Hermetically
packaged in a TO-52-S1 with a clear borosilicate glass
window cap.
MIN
-55
-40
-
-
-
-
2
MAX
+125
+100
+260
High Speed, High Gain Avalanche
100
200
250
1
BR
UNITS
Ø 5.40
mW
mW
ACTIVE AREA: 0.00785 mm
mA
µA
°C
°C
°C
TEST CONDITIONS
M = 100*
M = 100*
I
M = 100; = 0 V; λ = 800 nm
-3dB
M = 100
M = 100
M = 100
M = 100; λ = 880 nm
(100 µm DIA)
D
= 2 µA
FRONTSIDE VIEW
2
Pacific Silicon Sensor Series 8 Data Sheet
60
50
40
30
20
10
Ø 4.70
0
400
SPECTRAL RESPONSE at M = 100
Ø 3.00
VIEWING
ANGLE
500
116°
Part Description AD100-8-TO52-S1
600
APPLICATIONS
• High speed optical
• Laser range finder
• Medical equipment
• High speed photometry
3.60
WAVELENGTH (nm)
2.70
communications
MIN
0.35
120
200
---
---
45
---
50
---
---
---
---
2
700
12.7
3 PL
800
±1
Ø0.46
3 PL
3.0 X 10
CATHODE
PIN 1
TYP
0.45
0.15
190
0.8
2.2
0.2
50
50
---
60
---
---
900
PIN 4
CASE
-15
Order # 06-035
BACKSIDE VIEW
1000
Ø 2.54
PIN CIRCLE
MAX
0.55
100
180
---
---
---
---
---
---
---
---
---
---
Page 1 of 2
1100
PIN 3
ANODE
UNITS
pA/Hz
W/Hz
GHz
A/W
V/K
pA
pF
ps
V
1/2
1/2

Related parts for AD100-8-S1

AD100-8-S1 Summary of contents

Page 1

... Measurement conditions: Setup of photo current and irradiated by a 680 nm bandwidth LED. Increase the photo current up to 5.0 nA 100) by internal multiplication due to an increasing bias voltage. 8/23/2010 Pacific Silicon Sensor Series 8 Data Sheet Part Description AD100-8-TO52-S1 2 ACTIVE AREA: 0.00785 mm (100 µm DIA) Ø ...

Page 2

... Storage - Store devices in conductive foam. • Avoid skin contact with window. • Clean window with Ethyl alcohol if necessary. • Do not scratch or abrade window. USA: Pacific Silicon Sensor, Inc. 5700 Corsa Avenue, #105 Westlake Village, CA 91362 USA Phone (818) 706-3400 Fax (818) 889-7053 Email: sales@pacific-sensor ...

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