BPW 34 B OSRAM Opto Semiconductors Inc, BPW 34 B Datasheet

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BPW 34 B

Manufacturer Part Number
BPW 34 B
Description
Photodiodes PHOTODIODE T/H
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of BPW 34 B

Photodiode Material
Silicon
Peak Wavelength
850 nm
Maximum Reverse Voltage
32 V
Maximum Power Dissipation
150 mW
Maximum Dark Current
30 nA
Maximum Rise Time
25 ns
Maximum Fall Time
25 ns
Package / Case
DIL-2
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Package
2DIL
Wavelength
850 nm
Maximum Rise Time Range
15 to 250 ns
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
32V
Forward Voltage
1.3V
Responsivity
0.2A/W
Dark Current (max)
30nA
Power Dissipation
150mW
Rise Time
25ns
Fall Time
25ns
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
DIL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P0945
Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT
Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT
Lead (Pb) Free Product - RoHS Compliant
BPW 34 B
BPW 34 BS
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Kurze Schaltzeit (typ. 25 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
Anwendungen
• Lichtschranken für Gleich- und
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BPW 34 B
BPW 34 BS
2007-04-03
von 350 nm bis 1100 nm
Wechsellichtbetrieb im sichtbaren Lichtbereich
Bestellnummer
Ordering Code
Q65110A3126
Q65110A2625
BPW 34 B
1
Features
• Especially suitable for applications from
• Short switching time (typ. 25 ns)
• DIL plastic package with high packing density
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
350 nm to 1100 nm
BPW 34 BS

Related parts for BPW 34 B

BPW 34 B Summary of contents

Page 1

... Bestellnummer Type Ordering Code BPW 34 B Q65110A3126 BPW 34 BS Q65110A2625 2007-04-03 BPW 34 B Features • Especially suitable for applications from 350 nm to 1100 nm • Short switching time (typ. 25 ns) • DIL plastic package with high packing density Applications • Photointerrupters • Industrial electronics • ...

Page 2

... T = 2856 2856 K) Symbol Symbol S λ S max λ A × × ϕ λ η BPW 34 B, BPW 34 BS Wert Einheit Value Unit °C – 40 … 150 mW Wert Einheit Value Unit 75 nA/Ix 850 nm 350 … 1100 nm 2 7.45 mm 2.73 × 2.73 mm × mm ± 60 Grad deg ...

Page 3

... V, λ = 400 nm V Nachweisgrenze, R Detection limit 2007-04- 2856 2856 K) (cont’d) Symbol Symbol 800 μ NEP D* 3 BPW 34 B, BPW 34 BS Wert Value 7.4 (≥ 5. 1.3 72 – 2.6 V 0.18 I 1.3 × 10 – 13 2.1 × Einheit Unit μ mV/K %/K W ----------- - Hz × ------------------------- - W ...

Page 4

... Photocurrent Open-Circuit Voltage 3 10 μ A Ι Ι Capacitance MHz, R 100 ϕ 1.0 0.8 0.6 0.4 0 BPW 34 B, BPW Total Power Dissipation tot A OHF01066 4 160 tot 140 3 120 10 100 Dark Current OHF00081 3 10 Ι OHF01402 100 ...

Page 5

... Chip position 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.8 (0.071) Photosensitive area 2.65 (0.104) x 2.65 (0.104) 5 BPW 34 B, BPW 34 BS Chip position 0 ... 5˚ 5.08 (0.200) spacing GEOY6643 1.1 (0.043) 0.9 (0.035) ±0.2 (0.008) Cathode lead ...

Page 6

... CECC 00802) (acc. to CECC 00802 Welle 2. wave 2 K/s 5 K/s Zwangskühlung 2 K/s forced cooling 100 6 BPW 34 B, BPW 34 BS OHLA0687 +0 ˚C 260 ˚C -5 ˚C 245 ˚C ±5 ˚C +5 ˚C 235 ˚C -0 ˚ min 30 s max Ramp Down 6 K/s (max) ...

Page 7

... Life support devices or systems are intended ( implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail reasonable to assume that the health of the user may be endangered. 2007-04-03 BPW 34 B, BPW with the express written approval of OSRAM OS. 7 ...

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