KOM 2125-Z OSRAM Opto Semiconductors Inc, KOM 2125-Z Datasheet

Photodiodes PHOTODIODE

KOM 2125-Z

Manufacturer Part Number
KOM 2125-Z
Description
Photodiodes PHOTODIODE
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheets

Specifications of KOM 2125-Z

Photodiode Material
Silicon
Peak Wavelength
850 nm
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
150 mW
Maximum Light Current
40 uA or 100 uA
Maximum Dark Current
30 nA
Maximum Rise Time
18 ns, 25 ns
Maximum Fall Time
18 ns, 25 ns
Package / Case
DIL-SMT-3
Maximum Operating Temperature
+ 80 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Forward Voltage
1V
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
40/100uA
Rise Time
18/25ns
Fall Time
18/25ns
Operating Temp Range
-40C to 80C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
3
Package Type
SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q65110A2703
2fach-Silizium-PIN Fotodiode in SMT
2-Chip Silicon PIN Photodiode in SMT
KOM 2125
KOM 2125 FA
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Kurze Schaltzeit (typ. 25 ns)
• geeignet für Vapor-Phase Löten und
• SMT-fähig
Anwendungen
• Nachlaufsteuerungen
• Kantenführung
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
KOM 2125
KOM 2125 FA
2001-02-21
von 400 nm bis 1100 nm und bei 880 nm
(KOM 2125 FA)
IR-Reflow-Löten
Bestellnummer
Ordering Code
Q62702-K0047
Q62702-P5313
KOM 2125
1
Features
• Especially suitable for applications from
• Short switching time (typ. 25 ns)
• Suitable for vapor-phase and IR-reflow
• Suitable for SMT
Applications
• Follow-up controls
• Edge drives
• Industrial electronics
• For control and drive circuits
400 nm to 1100 nm and of 880 nm
(KOM 2125 FA)
soldering
KOM 2125 FA

Related parts for KOM 2125-Z

KOM 2125-Z Summary of contents

Page 1

... Kantenführung • Industrieelektronik • „Messen/Steuern/Regeln“ Typ Bestellnummer Type Ordering Code KOM 2125 Q62702-K0047 KOM 2125 FA Q62702-P5313 2001-02-21 KOM 2125 Features • Especially suitable for applications from 400 nm to 1100 nm and of 880 nm (KOM 2125 FA) • Short switching time (typ. 25 ns) • ...

Page 2

... Diode A I – P Diode B – 850 S max 400 Diode Diode B 10 Diode Diode Diode 30) R Diode 30) 2 KOM 2125, KOM 2125 FA Wert Einheit Value Unit – 150 mW Wert Value KOM 2125 FA – – 26 (> 20) 70 (> 50) 900 1100 750 ... 1100 ...

Page 3

... SC Diode B Diode Diode Diode Diode Diode A NEP Diode B Diode A D* Diode B 3 KOM 2125, KOM 2125 FA Wert Value KOM 2125 KOM 2125 FA 350 ( 300) – – 350 ( 300) 38 – 95 – – 24 – 1.0 1 100 100 – 2.6 – 2.6 0.18 – ...

Page 4

... Relative Spectral Sensitivity KOM 2125 FA rel 100 S % rel 400 600 800 Capacitance MHz 1.0 0.8 0.6 0.4 0 100 4 KOM 2125, KOM 2125 FA I Photocurrent Open-Circuit Voltage OHF01430 1000 nm 1200 Dark Current normalized to Total Power Dissipation tot A OHF01402 120 ...

Page 5

... If they fail reasonable to assume that the health of the user may be endangered. 2001-02-21 Photosensitive area (0.079 (0.079 (0.197 (0.079) 0.9 (0.035) 0.7 (0.028 8.5 (0.335) 8.2 (0.323 KOM 2125, KOM 2125 FA Chip position 0...0.1 (0...0.004) 0.3 (0.012) Active area 1.2 (0.047) 1.1 (0.043) GEOY6860 with the express written approval of OSRAM OS. ...

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