BP 104 F OSRAM Opto Semiconductors Inc, BP 104 F Datasheet

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BP 104 F

Manufacturer Part Number
BP 104 F
Description
Photodiodes PHOTODIODE SMT
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of BP 104 F

Photodiode Material
Silicon
Peak Wavelength
950 nm
Maximum Reverse Voltage
20 V
Maximum Power Dissipation
150 mW
Maximum Light Current
34 uA
Maximum Dark Current
30 nA
Maximum Rise Time
20 ns
Maximum Fall Time
20 ns
Package / Case
DIL-2
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
20V
Forward Voltage
1.3V
Responsivity
0.7A/W
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
34uA
Rise Time
20ns
Fall Time
20ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
DIL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P0084
Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT
Silicon Pin Photodiode with Daylight Filter; in SMT
Lead (Pb) Free Product - RoHS Compliant
BP 104 F
BP 104 FS
Wesentliche Merkmale
• Speziell geeignet für Anwendungen bei 950 nm
• Kurze Schaltzeit (typ. 20 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
Anwendungen
• IR-Fernsteuerung von Fernseh- und
• Lichtschranken für Gleich- und
Typ
Type
BP 104 F
BP 104 FS
2009-04-07
Rundfunkgeräten, Videorecordern,
Lichtdimmern, Gerätefernsteuerungen
Wechsellichtbetrieb
Bestellnummer
Ordering Code
Q62702-P0084
Q65110-A2627
BP 104 F
1
Features
• Especially suitable for applications of 950 nm
• Short switching time (typ. 20 ns)
• DIL plastic package with high packing density
Applications
• IR remote control of hi-fi and TV sets, video
• Photointerrupters
tape recorders, dimmers, remote controls of
various equipment
BP 104 FS

Related parts for BP 104 F

BP 104 F Summary of contents

Page 1

... Type Ordering Code BP 104 F Q62702-P0084 BP 104 FS Q65110-A2627 2009-04-07 BP 104 F Features • Especially suitable for applications of 950 nm • Short switching time (typ. 20 ns) • DIL plastic package with high packing density Applications • IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment • ...

Page 2

... Symbol Symbol I P λ S max λ A × × ϕ λ η 104 F, BP 104 FS Wert Einheit Value Unit °C – 40 … + 100 20 V 150 mW Wert Einheit Value Unit μA 34 (≥ 25) 950 nm 800 … 1100 nm 2 4.84 mm 2.20 × 2.20 mm × mm ± ...

Page 3

... Temperature coefficient of I Temperaturkoeffizient von SC Temperature coefficient of I Rauschäquivalente Strahlungsleistung Noise equivalent power Nachweisgrenze Detection limit 2009-04-07 Symbol Symbol 800 μ NEP 104 F, BP 104 FS Wert Einheit Value Unit μ 1 – 2.6 mV/K 0.18 %/K 3.6 × 10 –14 W ----------- - Hz 6.1 × × ------------------------- - W ...

Page 4

... Photocurrent Open-Circuit Voltage μ A Ι Ι μ W/cm Capacitance MHz ϕ 1.0 0.8 0.6 0.4 0 104 F, BP 104 Total Power Dissipation tot A OHF01056 4 10 160 tot 140 3 10 120 100 Dark Current OHF01778 3 10 Ι ...

Page 5

... Photosensitive area 2.20 (0.087) x 2.20 (0.087) Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.6 (0.063) ±0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GEOY6861 5 BP 104 F, BP 104 FS Chip position GEOY6075 ...

Page 6

... Welle 1. wave ca 200 K/s 5 K/s C Zwangskühlung 2 K/s forced cooling 50 100 6 BP 104 F, BP 104 FS Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 (nach J-STD-020C) (acc. to J-STD-020C) 260 ˚C 245 ˚C 235 ˚ min 30 s max Ramp Down 6 K/s (max) ...

Page 7

... Life support devices or systems are intended ( implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail reasonable to assume that the health of the user may be endangered. 2009-04-07 BP 104 F, BP 104 FS 2 with the express written approval of OSRAM OS. ...

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