BPV20F Vishay, BPV20F Datasheet

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BPV20F

Manufacturer Part Number
BPV20F
Description
Photodiodes 60V 215mW 950nm
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Datasheet

Specifications of BPV20F

Lens Type
Epoxy
Photodiode Material
Silicon
Peak Wavelength
950 nm
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
60 uA
Maximum Dark Current
30 nA
Maximum Rise Time
100 ns
Maximum Fall Time
100 ns
Package / Case
TO-92
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPV20F
Manufacturer:
sipex
Quantity:
10 000
Silicon PIN Photodiode
Description
BPV20F is a high speed and high sensitive PIN pho-
todiode in a plastic package with a cylindrical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emit-
ters (λ
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without com-
promising the viewing angle.
In comparison with flat packages the cylindrical lens
package achieves a sensitivity improvement of 20 %.
Features
Absolute Maximum Ratings
T
Document Number 81506
Rev. 1.5, 13-Nov-06
• Large radiant sensitive area (A = 7.5 mm
• Wide viewing angle ϕ = ± 65°
• Improved sensitivity
• Fast response times
• TO-92 plastic package with IR filter
• Filter designed for 950 nm transmission
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
p
= 950 nm).
Parameter
T
t ≤ 5 s
amb
≤ 25 °C
Test condition
2
)
e4
Applications
Infrared remote control and free air transmission sys-
tems in combination with IR emitter diodes (TSU...- or
TSI...-Series).
Symbol
R
T
T
T
V
P
amb
thJA
T
stg
sd
R
V
j
- 55 to + 100
- 55 to + 100
Vishay Semiconductors
Value
215
100
260
350
60
BPV20F
www.vishay.com
K/W
Unit
mW
°C
°C
°C
°C
V
1

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BPV20F Summary of contents

Page 1

... Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN pho- todiode in a plastic package with a cylindrical side view lens. The epoxy package itself filter, spectrally matched to GaAs or GaAs/GaAlAs IR emit- ters (λ = 950 nm). p Lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without com- promising the viewing angle ...

Page 2

... BPV20F Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Forward Voltage F = 100 μ Breakdown Voltage Reverse Dark Current MHz Diode capacitance MHz Serial Resistance R Optical Characteristics °C, unless otherwise specified amb Parameter Open Circuit Voltage mW/cm e Temp. Coefficient mW/cm ...

Page 3

... Figure 4. Reverse Light Current vs. Reverse Voltage 100 948407 Figure 5. Diode Capacitance vs. Reverse Voltage 1.2 1.0 0.8 0.6 0.4 0 8408 Figure 6. Relative Spectral Sensitivity vs. Wavelength BPV20F Vishay Semiconductors 2 1mW/cm 0.5 mW/cm 2 λ = 950 nm 0.2 mW/cm 2 0.1 mW/ 0.05 mW/cm 2 0.02 mW/cm 100 0 – Reverse Voltage (V) R ...

Page 4

... BPV20F Vishay Semiconductors 0° 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 0.2 94 8406 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement Package Dimensions in mm www.vishay.com 4 10° 20° 30° 40° 50° 60° 70° 80° 0.6 0.4 9612202 Document Number 81506 Rev. 1.5, 13-Nov-06 ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81506 Rev. 1.5, 13-Nov-06 and may do so without further notice. BPV20F Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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