BP 104 FASR-Z OSRAM Opto Semiconductors Inc, BP 104 FASR-Z Datasheet

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BP 104 FASR-Z

Manufacturer Part Number
BP 104 FASR-Z
Description
Photodiodes PHOTODIODE, SMT
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of BP 104 FASR-Z

Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
20V
Forward Voltage
1.3V
Responsivity
0.65A/W
Peak Wavelength
880nm
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
34uA
Rise Time
20ns
Fall Time
20ns
Photodiode Material
Si
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
2
Package Type
SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q65110A4263
Silizium-Pin-Fotodiode mit Tageslichtsperrfilter
Silicon Pin Photodiode with Daylight Filter
Lead (Pb) Free Product - RoHS Compliant
BP 104 FAS
BP 104 FASR
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Kurze Schaltzeit (typ. 20 ns)
• SMT-fähig
Anwendungen
• IR-Fernsteuerung von Fernseh- und
• Lichtschranken
Typ
Type
BP 104 FAS
BP 104 FASR
2007-04-18
von 730 nm… 1100nm
Rundfunkgeräten, Videorecordern,
Lichtdimmern, Gerätefernsteuerungen
Bestellnummer
Ordering Code
Q65110A2672
Q65110A4263
BP 104 FAS
Fotostrom, E
Photocurrent
Ip (
34 (≥25)
34 (≥25)
1
µ
Features
• Especially suitable for applications from
• Short switching time (typ. 20 ns)
• Suitable for SMT
Applications
• IR remote control of hi-fi and TV sets, video
• Photointerrupters
A)
730 nm… 1100nm
tape recorders, dimmers, remote controls of
various equipment
e
=1 mW/cm
BP 104 FASR
2
, V
R
= 5 V, λ = 880 nm

Related parts for BP 104 FASR-Z

BP 104 FASR-Z Summary of contents

Page 1

... Short switching time (typ. 20 ns) • Suitable for SMT Applications • IR remote control of hi-fi and TV sets, video tape recorders, dimmers, remote controls of various equipment • Photointerrupters Fotostrom Photocurrent µ (≥25) 34 (≥25 104 FASR = 5 V, λ = 880 mW/ ...

Page 2

... tot Symbol Symbol I P λ S max λ A ϕ λ η 104 FAS, BP 104 FASR Wert Einheit Value Unit ° C – 40 … + 100 20 V 150 mW Wert Einheit Value Unit µA 34 (≥ 25) 880 nm 730 … 1100 nm 2 4.84 mm ± 60 Grad deg. 2 (≤ 30 ...

Page 3

... Temperature coefficient Temperaturkoeffizient von I Temperature coefficient of Rauschäquivalente Strahlungsleistung Noise equivalent power Nachweisgrenze Detection limit 2007-04-18 Symbol Symbol 800 µ NEP 104 FAS, BP 104 FASR Wert Einheit Value Unit – 2.6 mV/K 0.18 %/K 3.6 × 10 –14 W ----------- - Hz 6.1 × × -------------------------- - W ...

Page 4

... Photocurrent Open-Circuit Voltage 3 10 µ A Ι Ι µ W/cm Capacitance MHz ϕ 1.0 0.8 0.6 0.4 0 104 FAS, BP 104 FASR Total Power Dissipation tot A OHF01056 4 10 160 tot 140 3 10 120 100 Dark Current OHF01778 3 10 Ι ...

Page 5

... Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GEOY6861 Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.6 (0.063) ±0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GPLY7049 5 BP 104 FAS, BP 104 FASR ...

Page 6

... If they fail reasonable to assume that the health of the user may be endangered. 2007-04-18 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 120 s max 50 100 150 6 BP 104 FAS, BP 104 FASR Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 (nach J-STD-020C) (acc. to J-STD-020C min 30 s max Ramp Down 6 K/s (max) 100 s max ...

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