TIL111SR2VM Fairchild Semiconductor, TIL111SR2VM Datasheet
TIL111SR2VM
Specifications of TIL111SR2VM
Related parts for TIL111SR2VM
TIL111SR2VM Summary of contents
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... Microprocessor inputs Appliance sensor systems Industrial controls Schematic ANODE 1 CATHODE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 General Description The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. ...
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... Collector-Emitter Voltage CEO V Collector-Base Voltage CBO V Emitter-Collector Voltage ECO V Emitter-Base Voltage EBO P Detector Power Dissipation @ T D Derate above 25°C ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Device All All All = 25°C All A All TIL111M MOC8100M, TIL117M All = 25 °C All ...
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... ECO Breakdown Voltage I Collector-Emitter Dark CEO Current I Collector-Base Dark CBO Current I CBO C Capacitance CE *All Typical values 25°C A ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0 25°C unless otherwise specified.) A Test Conditions I = 16mA T = 25° 10mA for T = 0°C–70° ...
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... Operation) Isolation Characteristics Symbol Characteristic V Input-Output Isolation Voltage ISO R Isolation Resistance ISO C Isolation Capacitance ISO *All Typical values 25°C A ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 (Continued 25°C unless otherwise specified.) A Test Conditions I = 10mA 10V 1mA MOC8100M F CE ...
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... Max. Working Insulation Voltage IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 5 Min. Typ. ...
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... I F 0.4 0 0.2 0.1 0.0 10 100 R – BASE RESISTANCE (k BE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 100 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 ...
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... R – BASE RESISTANCE (k BE TEST CIRCUIT I F INPUT R BE ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 (Continued) 5.0 4.5 4.0 3 3.0 2.5 2.0 1.5 1.0 0 100 Fig. 10 Dark Current vs. Ambient Temperature vs ...
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... Surface Mount 6.10–6.60 8.43–9.90 3.28–3.53 5.08 (Max.) 0.38 (Min.) Note: All dimensions in mm. ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02– ...
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... TIL111SR2M Surface Mount; Tape and Reel TIL111TM 0.4" Lead Spacing TIL111VM VDE 0884 TIL111TVM VDE 0884, 0.4" Lead Spacing TIL111SVM VDE 0884, Surface Mount TIL111SR2VM VDE 0884, Surface Mount, Tape and Reel TIL111 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – ...
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... Reflow Profile 300 280 260 240 220 200 180 160 C 140 120 100 ©2005 Fairchild Semiconductor Corporation TIL111M, TIL117M, MOC8100M Rev. 1.0.2 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 10 Ø ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...