Transistor Output Optocouplers TRANSISTOR OUTPUT

CNY17F1SM

Manufacturer Part NumberCNY17F1SM
DescriptionTransistor Output Optocouplers TRANSISTOR OUTPUT
ManufacturerFairchild Semiconductor
CNY17F1SM datasheet
 


Specifications of CNY17F1SM

Maximum Fall Time20 usMaximum Input Diode Current60 mA
Maximum Reverse Diode Voltage6 VMaximum Rise Time4 us
Output DevicePhototransistorOutput TypeDC
Configuration1 ChannelInput TypeDC
Maximum Collector Emitter Voltage70 VMaximum Collector Emitter Saturation Voltage0.4 V
Isolation Voltage5300 VrmsCurrent Transfer Ratio80 %
Maximum Forward Diode Voltage1.65 VMinimum Forward Diode Voltage1 V
Maximum Collector Current50 mAMaximum Power Dissipation250 mW
Maximum Operating Temperature+ 100 CMinimum Operating Temperature- 40 C
Package / CasePDIP-6 Gull WingLead Free Status / RoHS StatusLead free / RoHS Compliant
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CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M, MOC8107M
Phototransistor Optocouplers
Features
UL recognized (File # E90700, Vol. 2)
VDE recognized
– Add option V (e.g., CNY17F2VM)
– File #102497
Current transfer ratio in select groups
High BV
: 70V minimum (CNY17XM, CNY17FXM,
CEO
MOC810XM)
Closely matched current transfer ratio (CTR)
minimizes unit-to-unit variation.
Very low coupled capacitance along with no chip to
pin 6 base connection for minimum noise
susceptability (CNY17FXM, MOC810XM)
Applications
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
Schematics
1
ANODE
2
CATHODE
3
NC
CNY17F1M/2M/3M/4M
MOC8106M/7M
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1
Description
The CNY17XM, CNY17FXM and MOC810XM devices
consist of a Gallium Arsenide IRED coupled with an NPN
phototransistor in a dual in-line package.
Package Outlines
6
NC
ANODE
5 COLLECTOR
CATHODE
4 EMITTER
NC
November 2009
1
6
BASE
2
5
COLLECTOR
3
4 EMITTER
CNY171M/2M/3M/4M
www.fairchildsemi.com

CNY17F1SM Summary of contents

  • Page 1

    ... Industrial controls Schematics 1 ANODE 2 CATHODE 3 NC CNY17F1M/2M/3M/4M MOC8106M/7M ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Package Outlines 6 NC ANODE ...

  • Page 2

    ... Continuous Collector Current C V Collector-Emitter Voltage CEO V Emitter Collector Voltage ECO P Detector Power Dissipation @ 25°C D Derate Linearly from 25°C ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Parameters 2 Value Units -40 to +150 °C -40 to +100 °C -40 to +125 ºC 260 for 10 sec ° ...

  • Page 3

    ... MOC8107M CNY17F1M CNY17F2M CNY17F3M CNY17F4M CNY171M CNY172M CNY173M CNY174M V Collector-Emitter CNY17XM/FXM CE(sat) Saturation Voltage MOC8106M/7M *All typicals 25°C A ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1 25°C Unless otherwise specified.) A Test Conditions Device I = 60mA CNY17XM, F CNY17FXM I = 10mA MOC810XM 1.0MHz ...

  • Page 4

    ... Current Transfer Ratio (CTR For test circuit setup and waveforms, refer to Figures 10 and 11. 4. For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common. ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 (Continued 25°C Unless otherwise specified.) ...

  • Page 5

    ... Max. Working Insulation Voltage Vpeak IORM V Highest Allowable Over Voltage Vpeak IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Parameter , 100% Production Test PR , Type and Sample Test = 500V IO 5 Min. ...

  • Page 6

    ... BE Fig. 5 Switching Speed vs. Load Resistor 1000 I = 10mA 10V 25˚C A 100 T off 0.1 0 – LOAD RESISTOR (k ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Fig. 2 Normalized CTR vs. Ambient Temperature 1.4 Normalized 10mA F 1.2 1.0 0.8 0.6 0.4 Normalized to 0 -60 1.0 0.9 ...

  • Page 7

    ... R – BASE RESISTANCE ( INPUT Figure 10. Switching Time Test Circuit ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 (Continued) vs. R off BE V 10V 2mA 100 L 10000 100000 Fig. 9 Collector-Emitter Saturation Voltage vs Collector Current 100 T = 25˚ ...

  • Page 8

    ... Surface Mount 6.10–6.60 8.43–9.90 3.28–3.53 5.08 (Max.) 0.38 (Min.) Note: All dimensions in mm. ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02– ...

  • Page 9

    ... SR2 SR2V Marking Information Definitions ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 Order Entry Identifier (Example) CNY171M Standard Through Hole Device CNY171SM Surface Mount Lead Bend CNY171SR2M Surface Mount; Tape and Reel CNY171TM 0.4" Lead Spacing CNY171VM IEC60747-5-2 CNY171TVM IEC60747-5-2, 0.4" ...

  • Page 10

    ... Reflow Profile 300 280 260 240 220 200 180 160 C 140 120 100 ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 10 Ø ...

  • Page 11

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ ...