TCET1102G Vishay, TCET1102G Datasheet

Transistor Output Optocouplers Phototransistor Out Single CTR 63-125%

TCET1102G

Manufacturer Part Number
TCET1102G
Description
Transistor Output Optocouplers Phototransistor Out Single CTR 63-125%
Manufacturer
Vishay
Datasheet

Specifications of TCET1102G

Isolation Voltage
5000 Vrms
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
0.3 V
Current Transfer Ratio
125 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
265 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
PDIP-4
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
4
Mounting Type
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TCET1102G
Manufacturer:
ROHM
Quantity:
7 840
Part Number:
TCET1102G
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
TCET1102G
Quantity:
70 000
Company:
Part Number:
TCET1102G
Quantity:
70 000
TCET1100, TCET1100G
Vishay Semiconductors
DESCRIPTION
The TCET110. consists of a phototransistor optically coupled
to a gallium arsenide infrared-emitting diode in a 4-lead
plastic dual inline package.
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• cUL tested, file A52744
• BSI: EN 60065:2002, EN 60950:2000
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO
www.vishay.com
810
17197_4
Optocoupler, Phototransistor Output, High Temperature
For technical questions, contact:
17197_5
C
C
A
4
1
C
3
E
2
D E
V
optocoupleranswers@vishay.com
FEATURES
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 9 groups
• Reinforced isolation provides circuit protection
• Isolation materials according to UL 94 V-O
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated
• Isolation test voltage (partial discharge test voltage)
• Rated
• Rated
• Creepage current resistance according to VDE 0303/
• Compliant to RoHS directive 2002/95/EC and in
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage ≤ 300 V
• for appl. class I - III at mains voltage ≤ 600 V according to
against electrical shock (safety class II)
V
V
V
V
IEC 60112 comparative tracking index: CTI ≥ 175
accordance to WEEE 2002/96/EC
DIN EN 60747-5-5 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
IOTM
pd
IOWM
IORM
= 1.6 kV
= 6 kV
= 848 V
= 600 V
isolation
impulse
recurring
peak
peak
RMS
voltage
voltage
peak
(transient
(RMS
Document Number: 83503
voltage
Rev. 2.3, 14-Oct-09
includes
overvoltage)
(repetitive)
DC)

Related parts for TCET1102G

TCET1102G Summary of contents

Page 1

... TCET1100, TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature C 17197_5 17197_4 DESCRIPTION The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS • UL1577, file no. E52744, double protection • cUL tested, file A52744 • ...

Page 2

... ORDER INFORMATION PART TCET1100 TCET1101 TCET1102 TCET1103 TCET1104 TCET1105 TCET1106 TCET1107 TCET1108 TCET1109 TCET1100G TCET1101G TCET1102G TCET1103G TCET1104G TCET1105G TCET1106G TCET1107G TCET1108G TCET1109G Note G = lead form 10.16 mm not marked on the body ABSOLUTE MAXIMUM RATINGS PARAMETER INPUT Reverse voltage Forward current Forward surge current ...

Page 3

... The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s “Thermal Characteristics of Optocouplers” application note. ...

Page 4

... SYMBOL TCET1101 TCET1101G TCET1102 TCET1102G = TCET1103 TCET1103G TCET1104 TCET1104G TCET1100 TCET1100G TCET1105 TCET1105G TCET1106 TCET1106G = TCET1107 TCET1107G TCET1108 TCET1108G TCET1109 TCET1109G TCET1101 TCET1101G TCET1102 TCET1102G = TCET1103 TCET1103G TCET1104 TCET1104G SYMBOL MIN diss V IOTM T si TEST CONDITION SYMBOL 100 %, test IOTM Tr test ...

Page 5

... TCET1100, TCET1100G Vishay Semiconductors 300 Phototransistor 250 P (mW) si 200 150 100 IR-diode 50 I (mA 100 T - Safety Temperature (°C) 94 9182 si Fig Derating Diagram SWITCHING CHARACTERISTICS PARAMETER Delay time Rise time Turn-on time Storage time Fall time Turn-off time Turn-on time Turn-off time + Ω ...

Page 6

... Optocoupler, Phototransistor Output, High Temperature off Storage time Fall time + t ) Turn-off time f 96 11698 120 1.6 2.0 95 11026 Fig Collector Dark Current vs. Ambient Temperature optocoupleranswers@vishay.com TCET1100, TCET1100G Vishay Semiconductors 2 1.5 1.0 0 Ambient Temperature (°C) 95 11025 amb Fig Relative Current Transfer Ratio vs. ...

Page 7

... TCET1100, TCET1100G Vishay Semiconductors 100 0.1 0.01 0 Forward Current (mA) 95 11027 F Fig Collector Current vs. Forward Current 100 0.1 0 Collector Emitter Voltage (V) 95 10985 CE Fig Collector Current vs. Collector Emitter Voltage 1 used 0.8 CTR = 50 % used 0.6 0.4 0 used Collector Current (mA) 95 11028 C Fig Collector Emitter Saturation Voltage vs. ...

Page 8

... TCET1100G type 7.62 typ. 4.5 ± 0.3 2.55 ± 0.25 10.16 typ. 20802-3 ET1100 V YWW 24 21764-3 optocoupleranswers@vishay.com TCET1100, TCET1100G Vishay Semiconductors 7.62 to 9.5 7.62 typ. 2.8 ± 0.5 0° to 15° 0.25 typ. www.vishay.com 817 ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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