MOC216R2M Fairchild Semiconductor, MOC216R2M Datasheet

Transistor Output Optocouplers 8-Pin Optocoupler Phototransistor

MOC216R2M

Manufacturer Part Number
MOC216R2M
Description
Transistor Output Optocouplers 8-Pin Optocoupler Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MOC216R2M

Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Isolation Voltage
2500 Vrms
Maximum Forward Diode Voltage
1.3 V
Maximum Collector Current
150 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MOC216R2M
Manufacturer:
FAIRCHIL
Quantity:
4 241
Part Number:
MOC216R2M
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2005 Fairchild Semiconductor Corporation
MOC215M, MOC216M, MOC217M Rev. 1.0.1
MOC215M, MOC216M, MOC217M
Small Outline Surface Mount Phototransistor
Optocouplers
Features
Applications
Schematic
U.L. recognized (File #E90700, Volume 2)
VDE recognized (File #136616)
(add option “V” for VDE approval, i.e, MOC205VM)
Convenient plastic SOIC-8 surface mountable
package style
Low LED input current required for easier logic
interfacing
Standard SOIC-8 footprint, with 0.050" lead spacing
Compatible with dual wave, vapor phase and
IR reflow soldering
High input-output isolation of 2500 V
guaranteed
Low power logic circuits
Interfacing and coupling systems of different
potentials and impedances
Telecommunications equipment
Portable electronics
CATHODE
ANODE
N/C
N/C
1
2
3
4
8
7
6
5
AC(rms)
N/C
BASE
COLLECTOR
EMITTER
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for high
density applications, and eliminate the need for through-
the-board mounting.
Marking Information
MOC215M = 215
MOC216M = 216
MOC217M = 217
www.fairchildsemi.com
April 2009

Related parts for MOC216R2M

MOC216R2M Summary of contents

Page 1

... CATHODE 2 N/C 3 N/C 4 ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 Description These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through- the-board mounting ...

Page 2

... Storage Temperature Range stg Notes: 1. Isolation Surge Voltage internal device dielectric breakdown rating. ISO 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0 25°C Unless otherwise specified) A Rating = 25° 25° ...

Page 3

... For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common rating of 2500 V for min. is equivalent to a rating of 3,000 V ISO AC(rms) 4. Current Transfer Ratio (CTR ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0 25°C unless otherwise specified) A Test Conditions ...

Page 4

... A Fig. 5 Dark Current vs. Ambient Temperature 10000 V = 10V CE 1000 100 – AMBIENT TEMPERATURE ( C) A ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0 0.1 100 0.01 0.1 Fig. 4 Output Current vs. Collector-Emitter Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 ...

Page 5

... R – BASE RESISTANCE ( TEST CIRCUIT INPUT R BE Figure 10. Switching Time Test Circuit and Waveforms ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 (Continued) vs. R off BE 1.0 0.9 0.8 0.7 0 20mA F 0.5 0.4 0.3 0.2 0.1 ...

Page 6

... Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifi ...

Page 7

... Ordering Information Option Order Entry Identifi R2V Marking Information Definitions ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 V VDE 0884 R2 Tape and reel (2500 units per reel) R2V VDE 0884, Tape and reel (2500 units per reel Fairchild logo ...

Page 8

... Carrier Tape Specifications 3.50 0.20 0.30 MAX 8.3 0.10 0.1 MAX User Direction of Feed Dimensions in mm ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 8.0 0.10 2.0 0.05 4.0 0.10 6.40 0.20 8 Ø1.5 MIN 1.75 0.10 5.5 0.05 12.0 0.3 5 ...

Page 9

... Time (t ) Maintained Above (T L Peak Body Package Temperature Time (t ) within 5°C of 260°C P Ramp-down Rate (T Time 25°C to Peak Temperature ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S Tsmax Preheat Area Tsmin t s 120 240 Time 25° ...

Page 10

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...

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