FOD817W

Manufacturer Part NumberFOD817W
DescriptionTransistor Output Optocouplers TRANS OUTPUT 0.4 INCH LE
ManufacturerFairchild Semiconductor
FOD817W datasheet
 


Specifications of FOD817W

Maximum Fall Time18 usMaximum Input Diode Current50 mA
Maximum Reverse Diode Voltage6 VMaximum Rise Time18 us
Output DevicePhototransistorOutput TypeDC
Configuration1 ChannelInput TypeDC
Maximum Collector Emitter Voltage70 VMaximum Collector Emitter Saturation Voltage0.2 V
Isolation Voltage5000 VrmsCurrent Transfer Ratio600 %
Maximum Forward Diode Voltage1.4 VMaximum Collector Current50 mA
Maximum Power Dissipation200 mWMaximum Operating Temperature+ 110 C
Minimum Operating Temperature- 55 CPackage / CasePDIP-4
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FOD814 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers
Features
AC input response (FOD814 only)
Applicable to Pb-free IR reflow soldering
Compact 4-pin package
Current transfer ratio in selected groups:
FOD814: 20–300%
FOD817: 50–600%
FOD814A: 50–150%
FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
C-UL, UL and VDE approved
High input-output isolation voltage of 5000Vrms
Minimum BV
of 70V guaranteed
CEO
Higher operating temperatures (versus H11AXXX
counterparts)
Applications
FOD814 Series
AC line monitor
Unknown polarity DC sensor
Telephone line interface
FOD817 Series
Power supply regulators
Digital logic inputs
Microprocessor inputs
Functional Block Diagram
ANODE, CATHODE
1
CATHODE, ANODE
2
FOD814
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
4
COLLECTOR
1
ANODE
3
EMITTER
2
CATHODE
FOD817
July 2009
4
COLLECTOR
4
3 EMITTER
1
www.fairchildsemi.com

FOD817W Summary of contents

  • Page 1

    ... Functional Block Diagram ANODE, CATHODE 1 CATHODE, ANODE 2 FOD814 ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package ...

  • Page 2

    ... V Collector-Emitter Voltage CEO V Emitter-Collector Voltage ECO I Continuous Collector Current C P Collector Power Dissipation C Derate above 90°C ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1 25°C Unless otherwise specified.) A FOD814 -55 to +105 ±50 2 Value Units FOD817 -55 to +150 °C -55 to +110 ° ...

  • Page 3

    ... Saturation Voltage AC Transfer Characteristics Symbol AC Characteristic f Cut-Off Frequency C t Response Time (Rise Response Time (Fall) f *Typical values 25°C A ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1 25°C Unless otherwise specified.) A Device Test Conditions FOD814 I = ±20mA F FOD817 I = 20mA F FOD817 ...

  • Page 4

    ... Current Transfer Ratio (CTR For test circuit setup and waveforms, refer to page 7. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1 25°C Unless otherwise specified.) (Continued) ...

  • Page 5

    ... Fig. 5 Forward Current vs. Forward Voltage (FOD817) 100 110 0.1 0.5 1.0 FORWARD VOLTAGE V ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1 25°C Unless otherwise specified.) A 200 150 100 50 0 -55 (°C) A Fig. 4 Forward Current vs. Forward Voltage 100 Ta = 25° 0.1 7.5 10 ...

  • Page 6

    ... AMBIENT TEMPERATURE T Fig. 11 LED Power Dissipation vs. Ambient Temperature (FOD814) 100 -55 -40 - 100 120 AMBIENT TEMPERATURE T A (°C) ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 (Continued Ta= 25°C (V) CE Fig. 10 Collector-Emitter Saturation Voltage 0.12 0.10 0.08 0.06 0.04 0.02 0.00 (° ...

  • Page 7

    ... LOAD RESISTANCE Test Circuit for Response Time Vcc Output Input D ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 (Continued -10 - Fig. 15 Collector Dark Current vs. Ambient Temperature 10000 V = 20V CE 1000 100 10 1 0.1 0.01 -60 -40 - 100 120 AMBIENT TEMPERATURE T A (° ...

  • Page 8

    ... Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifi ...

  • Page 9

    ... FOD814300 300W FOD814300W 3S FOD8143S 3SD FOD8143SD Marking Information Definitions ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 FOD814S VDE Approved, 0.4" Lead Spacing VDE Approved, Surface Mount, Tape & Reel 814 1 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – ...

  • Page 10

    ... Note: All dimensions are in millimeters. Symbol W Tape wide P Pitch of sprocket holes 0 F Distance of compartment Distance of compartment to compartment 1 A0 Compartment B0 K0 ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1 Description 1.75 0 0.3 0.05 K0 Dimensions in mm (inches) 16 ± 0.3 (.63) 4 ± 0.1 (.15) 7.5 ± ...

  • Page 11

    ... Melt soldering zone Peak temperature (Tp) Ramp-down rate Recommended Wave Soldering condition Profile Feature Peak temperature (Tp) ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 ts (Preheat) Time (sec) Pb-Sn solder assembly 100°C ~ 150° 120 sec 183° 120 sec 240 +0/-5° ...

  • Page 12

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ ...