MOC217R1VM Fairchild Semiconductor, MOC217R1VM Datasheet
MOC217R1VM
Specifications of MOC217R1VM
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MOC217R1VM Summary of contents
Page 1
... CATHODE 2 N/C 3 N/C 4 ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 Description These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through- the-board mounting ...
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... Storage Temperature Range stg Notes: 1. Isolation Surge Voltage internal device dielectric breakdown rating. ISO 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0 25°C Unless otherwise specified) A Rating = 25° 25° ...
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... For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common rating of 2500 V for min. is equivalent to a rating of 3,000 V ISO AC(rms) 4. Current Transfer Ratio (CTR ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0 25°C unless otherwise specified) A Test Conditions ...
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... A Fig. 5 Dark Current vs. Ambient Temperature 10000 V = 10V CE 1000 100 – AMBIENT TEMPERATURE ( C) A ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0 0.1 100 0.01 0.1 Fig. 4 Output Current vs. Collector-Emitter Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 ...
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... R – BASE RESISTANCE ( TEST CIRCUIT INPUT R BE Figure 10. Switching Time Test Circuit and Waveforms ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 (Continued) vs. R off BE 1.0 0.9 0.8 0.7 0 20mA F 0.5 0.4 0.3 0.2 0.1 ...
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... Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifi ...
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... Ordering Information Option Order Entry Identifi R2V Marking Information Definitions ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 V VDE 0884 R2 Tape and reel (2500 units per reel) R2V VDE 0884, Tape and reel (2500 units per reel Fairchild logo ...
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... Carrier Tape Specifications 3.50 0.20 0.30 MAX 8.3 0.10 0.1 MAX User Direction of Feed Dimensions in mm ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 8.0 0.10 2.0 0.05 4.0 0.10 6.40 0.20 8 Ø1.5 MIN 1.75 0.10 5.5 0.05 12.0 0.3 5 ...
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... Time (t ) Maintained Above (T L Peak Body Package Temperature Time (t ) within 5°C of 260°C P Ramp-down Rate (T Time 25°C to Peak Temperature ©2005 Fairchild Semiconductor Corporation MOC215M, MOC216M, MOC217M Rev. 1.0.1 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S Tsmax Preheat Area Tsmin t s 120 240 Time 25° ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...