MB1S Fairchild Semiconductor, MB1S Datasheet

MB1S

Manufacturer Part Number

MB1S

Description

IC BRIDGE RECT 0.5A 100V 4-SOIC

Manufacturer

Fairchild Semiconductor

Datasheet

1.MB2S.pdf (3 pages)

Specifications of MB1S

Voltage - Peak Reverse (max)

100V

Current - Dc Forward (if)

500mA

Diode Type

Single Phase

Speed

Standard Recovery >500ns, > 200mA (Io)

Mounting Type

Surface Mount

Package / Case

MBS-1, 4-SOIC

Phase Type

Single Phase

Number Of Elements

Peak Rep Rev Volt

100V

Rms Voltage (max)

70V

Peak Non-repetitive Surge Current (max)

35A

Avg. Forward Curr (max)

0.5@Ta=50CA

Rev Curr

5uA

Forward Voltage

Package Type

SOIC

Operating Temp Range

-55C to 150C

Pin Count

Mounting

Surface Mount

Operating Temperature Classification

Military

Product

Single Phase Bridge

Peak Reverse Voltage

100 V

Maximum Rms Reverse Voltage

70 V

Forward Continuous Current

0.5 A

Max Surge Current

35 A

Forward Voltage Drop

1 V

Maximum Reverse Leakage Current

5 uA

Power Dissipation

1.4 W

Maximum Operating Temperature

+ 150 C

Length

4.9 mm

Width

4.2 mm

Height

2.7 mm

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Lead Free Status / Rohs Status

Compliant

Other names

MB1S
MB1STR

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Current page: 1 of 3
Download datasheet (168Kb)

MB1S - MB8S Rev. D1

MB1S - MB8S

Bridge Rectifiers

Features

• Low leakage

• Surge overload rating : 35 amperes peak.

• Ideal for printed circuit board.

• UL certified, UL #E111753 and E326243.

Absolute Maximum Ratings *

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length.

Electrical Characteristics

Symbol

F(AV)

FSM

RRM

RMS

STG

θJA

θJL

Maximum Repetitive Reverse Voltage

Maximum RMS Bridge Input Voltage

DC Reverse Voltage (Rated V

Average Rectified Forward Current @ T

Non-Repetitive Peak Forward Surge Current

Storage Temperature Range

Operating Junction Temperature

Power Dissipation

Thermal Resistance, Junction to Ambient,* per leg

Thermal Resistance, Junction to Lead,* per leg

Forward Voltage, per bridge @ 0.5 A

Reverse Current, per leg @ Rated V

Total Capacitance, per leg V

t rating for fusing

8.3 ms Single Half-Sine-Wave

Parameter

t < 8.3 ms

= 25° C unless otherwise noted

= 4.0V, f = 1.0MHz

)

= 25° C unless otherwise noted

= 50°C

Polarity symbols molded

= 125°C

or marking on body

= 25°C

SOIC-4

100

200

140

200

-55 to +150

Value

400

280

400

1.4

1.0

5.0

0.5

5.0

0.5

600

420

600

800

560

800

www.fairchildsemi.com

May 2009

Units

°C/W

µA

°C

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MB1S Summary of contents

Page 1

... Forward Voltage, per bridge @ 0 Reverse Current, per leg @ Rated rating for fusing C Total Capacitance, per leg V T © 2009 Fairchild Semiconductor Corporation MB1S - MB8S Rev. D1 SOIC-4 Polarity symbols molded or marking on body T = 25° C unless otherwise noted A Parameter 100 ) 100 R = 50°C ...

Page 2

... Typical Performance Characteristics Figure 1. Forward Current Derating Curve Figure 3. Non-Repetitive Surge Current © 2009 Fairchild Semiconductor Corporation MB1S - MB8S Rev. D1 Figure 2. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage 2 www.fairchildsemi.com ...

Page 3

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM F-PFS FRFET Build it Now CorePLUS Global Power Resource CorePOWER Green FPS CROSSVOLT Green FPS CTL™ ...

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