MB10M-G Comchip Technology, MB10M-G Datasheet
MB10M-G
Manufacturer Part Number
MB10M-G
Description
BRIDGE DIODE GPP 0.8A 1000V MBM
Manufacturer
Comchip Technology
Datasheet
1.MB05M-G.pdf
(2 pages)
Specifications of MB10M-G
Voltage - Peak Reverse (max)
1000V
Current - Dc Forward (if)
800mA
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
MBM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 0.8A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
Typical Junction Capacitance Per Element (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES:1.Mounted on P.C. board.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rectified Current (Note 1)
MECHANICAL DATA
FEATURES
- Mounting position :Any
- Rating to 1000V PRV
- Ideal for printed circuit board
- Lead tin plated copper
- Polarity:Symbol molded on body
- Weight: 0.0044 ounces,0.125 grams
- Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
Glass Passivated Bridge Rectifiers
MB05M-G thru MB10M-G
"-G" : RoHS Device
2.Measured at1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
MDS0912009A
CHARACTERISTICS
@T
@T
@T
J
J
=125℃
A
=25℃
=40 ℃
SYMBOL MB05M
V
V
T
R
I
V
I
FSM
(AV)
V
C
RRM
RMS
T
I
STG
θJC
DC
R
F
J
J
50
35
50
.031(0.8)
.019(0.5)
REVERSE VOLTAGE - 50 to 1000 V
FORWARD CURRENT - 0.8 A
MB1M
.217(5.5)
.177(4.5)
100
100
70
Dimensions in inches and (millimeters)
+
~ ~
.106(2.7)
.090(2.3)
MB2M
200
140
200
.193(4.9)
.177(4.5)
.106(2.7)
.090(2.3)
-
-55 to +150
-55 to +150
MB4M
400
280
400
500
0.8
1.1
5.0
30
15
75
.031(0.8)
.019(0.5)
MBM
.051(1.3)
.106(2.7)
.090(2.3)
.035(0.9)
C0.5
MB6M
600
420
600
.014(.35)
.006(.15)
MB8M
800
560
800
.165(4.2)
.146(3.7)
.256(6.5)
.217(5.5)
MB10M
Page 1
1000
1000
700
UNIT
℃/W
μA
pF
℃
℃
V
V
V
A
A
V
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MB10M-G Summary of contents
Page 1
... Glass Passivated Bridge Rectifiers MB05M-G thru MB10M-G "-G" : RoHS Device FEATURES - Rating to 1000V PRV - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique results in inexpensive product - Lead tin plated copper MECHANICAL DATA - Polarity:Symbol molded on body - Weight: 0.0044 ounces,0.125 grams ...
Page 2
... Silicon Bridge Rectifiers RATINGS AND CHARACTERISTIC CURVES MB05M-G thru MB10M-G FIG.1-FORWARD CURRENT DERATING CURVE 1.0 0.8 0.6 0.4 MOUNTED ON BOARD 0.2 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 0.1 20 100 AMBIENT TEMPERATURE, ℃ FIG.3-TYPICAL REVERSE CHARACTERISTICS 100 T =125° 1.0 T =25° ...