VUO60-18NO3 IXYS, VUO60-18NO3 Datasheet - Page 2

• Manufacturer Part Number: VUO60-18NO3
• Description: RECT BRIDGE 3PH 72A 1800V FO-F-B
• Manufacturer: IXYS

Specifications of VUO60-18NO3

• Voltage - Peak Reverse (max): 1800V
• Current - Dc Forward (if): 72A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: PCB
• Package / Case: FO-F-B
• Phase Type: Three Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 1.8kV
• Peak Non-repetitive Surge Current (max): 650A
• Avg. Forward Curr (max): 72A
• Rev Curr: 300uA
• Forward Voltage: 1.9V
• Package Type: ISOPLUS i5-Pac
• Operating Temp Range: -40C to 125C
• Pin Count: 7
• Mounting: Screw
• Operating Temperature Classification: Automotive
• Vrrm, (v): 1800
• Vrsm, (v): 1900
• Idavm, (a): 72
• @ Th, (°c): -
• @ Tc, (°c): 85
• Ifsm, 10 Ms, Tvj = 45°c, (a): 600
• Vt0, (v): 0.80
• Rt, (mohms): 6.5
• Tvjm, (°c): 125
• Rthjc, Per Chip, (k/w): 1.20
• Rthjh, Per Chip, (k/w): 1.60
• Package Style: FO-F-B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant

© 2008 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
I
P
Z
F
tot
thJH
K/W
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
W
50
A
0.001
0
0
0.0
0
Fig. 4 Forward current versus
Fig. 9 Transient thermal impedance junction to heatsink
Fig. 7 Power dissipation vs. direct output current and ambient temperature
T
T
10
VJ
VJ
=125°C
= 25°C
voltage drop per diode
20
0.5
0.01
30
40
1.0
V
F
50
I
V
d(AV)M
0.1
60
1.5
70
I
A
FSM
600
500
400
300
200
100
0
A
0.001
0
Fig. 5 Surge overload current
50Hz, 80% V
20
1
T
VJ
40
= 125°C
0.01
60
RRM
T
80
10
VJ
T
= 45°C
amb
0.1
100 120
t
t
R
0.2 K/W
0.5 K/W
1.0 K/W
1.5 K/W
2.0 K/W
3.0 K/W
5.0 K/W
s
s
thHA
:
°C
1
100
I
d(AV)M
Constants for Z
I
2
t
1
2
3
4
A
10
10
10
i
80
70
60
50
40
30
20
10
2
A
0
s
4
3
2
1
0
Fig. 8 Max. forward current vs.
Fig. 6 I
V
R
= 0 V
T
20
VJ
R
0.883
0.098
0.202
0.417
= 45°C
case temperature
thi
2
40
t versus time per diode
2
(K/W)
thJH
60
calculation:
3
T
VUO 60
80 100 120
VJ
4 5 6 7 8 9
= 125°C
T
t
0.102
0.103
0.492
0.62
i
C
(s)
t
20080527a
ms
2 - 2
°C
10