W04G Fairchild Semiconductor, W04G Datasheet
W04G
Manufacturer Part Number
W04G
Description
RECT BRIDGE GPP 1.5A 400V WOB
Manufacturer
Fairchild Semiconductor
Specifications of W04G
Voltage - Peak Reverse (max)
400V
Current - Dc Forward (if)
1.5A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
WOB
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
400V
Rms Voltage (max)
280V
Peak Non-repetitive Surge Current (max)
50A
Avg. Forward Curr (max)
1.5@Ta=50CA
Rev Curr
5uA
Forward Voltage
1V
Package Type
WOB
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
W04G
Manufacturer:
HY
Quantity:
20 000
Company:
Part Number:
W04G-E4/51
Manufacturer:
INFINEON
Quantity:
16 730
2001 Fairchild Semiconductor Corporation
V
V
V
I
V
C
Symbol
RM
1.5 Ampere Glass Passivated Bridge Rectifiers
RRM
RMS
R
FM
Absolute Maximum Ratings*
I
I
P
R
R
T
T
*
**
Features
•
•
•
•
•
Symbol
F(AV)
FSM
Electrical Characteristics
stg
J
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
D
JA
JL
Device mounted on PCB with 0.375" (9.5 mm) lead length.
Surge overload rating: 50 amperes
peak.
Glass passivated junction.
Ideal for printed circuit board.
results in inexpensive product.
UL certified, UL #E96005.
Reliable low cost construction technique
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
Maximum Instantaneous Reverse Leakage, total
bridge @ rated V
Maximum Instantaneous Forward Voltage Drop,
per bridge
I
Typical Junction Capacitance, per leg
2
t rating for fusing
Average Rectified Current
Non-repetitive Peak Forward Surge Current
Total Device Dissipation
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Lead,** per leg
Storage Temperature Range
Operating Junction Temperature
V
R
= 4.0 V, f = 1.0 MHz
@ T
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Derate above 25 C
R
Parameter
A
= 50 C
T
T
@ 1.0 A
t < 8.3 ms
(Rated V
A
A
= 25 C
= 125 C
Parameter
W005G - W10G
R
T
)
A
= 25°C unless otherwise noted
T
A
= 25°C unless otherwise noted
005G
35
50
50
01G
100
100
70
+
02G
WOB
200
140
200
~
~ -
Device
-55 to +150
-55 to +150
500
5.0
1.0
04G
10
15
400
280
400
Value
3.47
1.5
50
28
36
11
06G 08G
600
420
600
800
560
800
1000
1000
10G
mW/ C
700
Units
W005G - W10G, Rev. A2
C/W
C/W
W
A
A
C
C
Units
A
pF
V
V
V
V
2
A
A
s
Related parts for W04G
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
W04G Summary of contents
Page 1
... Maximum Instantaneous Forward Voltage Drop, FM per bridge rating for fusing C Typical Junction Capacitance, per leg 1.0 MHz R 2001 Fairchild Semiconductor Corporation W005G - W10G T = 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A 005G 01G 50 100 35 70 ...
Page 2
... AMBIENT TEMPERATURE ( C) Forward Characteristics º Pulse Width = 300 s 2% Duty Cycle 0.1 0.01 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) Glass Passivated Bridge Rectifiers Non-Repetitive Surge Current 150 175 1 2 º NUMBER OF CYCLES AT 60Hz Reverse Characteristics 10 1 0.1 0.01 1.2 1.4 ...
Page 3
WOB Package Dimensions WOB (FS PKG Code R5) 0.217(5.5) 0.197(5.0) 1.2(30.5) POS.LEAD 0.220(5.6) 0.180(4.6) Scale 1:1 on letter size paper Dimensions shown below are in: Part Weight per unit (gram): 1.1 0.358(9.1) 0.339(8.6) 1.0(25.4) MIN 0.032(.81) DIA 0.030(.76 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...