SMDB3 STMicroelectronics, SMDB3 Datasheet
SMDB3
Specifications of SMDB3
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SMDB3 Summary of contents
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... I Repetitive peak on-state current TRM 120 Hz Tstg Storage temperature range Tj Operating junction temperature range Note: * SMDB3 indicated as Preliminary spec as product is still in development stage. October 2001 - Ed: 2B DB3 DB4 SMDB3 Pin 1 and 3 must be shorted Parameter SMDB3 DB3 / DB4 DIAC DO-35 (DB3 and DB4) ...
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... DB3 DB4 SMDB3 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Symbol Parameter V Breakover voltage * Breakover voltage BO1 BO2 symmetry V Dynamic breakover voltage * V Output voltage * O I Breakover current * BO tr Rise time * I Leakage current * R I Peak current * P * Applicable to both forward and reverse directions. ...
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... I F 10mA Marking Weight 0.01 g 0.15 g 0.15 g Diagram 2: Test circuit. 220 Diagram 3: Rise time measurement 0 DB3 DB4 SMDB3 Base Quantity Packing Mode 3000 Tape & Reel 5000 Tape & Reel 5000 Tape & Reel 10 k 500 k D.U.T Rs=0 C=0.1µ ...
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... SMDB3 1.0 0.1 1 100 125 C(nF) 200 500 REF DB3 DB4 SMDB3 F=120Hz Tj initial=25°C DB3/DB4 SMDB3 tp(µs) 10 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 3.05 4.50 0.120 0.177 1.53 2.00 0.060 0.079 28.00 1.102 0.458 0.558 0.018 0.022 ...
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... Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. REF 0.9 0.035 mm inch STMicroelectronics GROUP OF COMPANIES http://www.st.com DB3 DB4 SMDB3 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 0.89 1.4 0.035 0.055 0 0.1 0 0.004 0.3 0.51 0.012 0.02 0.085 0.18 0.003 0.007 2 ...