GBPC1506T/W GeneSiC Semiconductor, GBPC1506T/W Datasheet
GBPC1506T/W
Manufacturer Part Number
GBPC1506T/W
Description
Bridge Rectifiers 600V 15A Bridge Rectifier
Manufacturer
GeneSiC Semiconductor
Datasheet
1.GBPC1506T.pdf
(2 pages)
Specifications of GBPC1506T/W
Peak Reverse Voltage
600 V
Maximum Rms Reverse Voltage
420 V
Forward Continuous Current
15 A
Max Surge Current
300 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Package / Case
GBPC-T/W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.genesicsemi.com
Features
• Integrally molded heat sink provides low thermal
resistance for maximum heat dissipation
• Types up to 1000 V V
• High surge current capability
• High temperature soldering guaranteed: 260⁰C/ 10
seconds at 5 lbs(2.3 kg) tension
• Universal 3-way terminals: snap on, wire-around, or P.C board mounting
Mechanical Data
Case: Molded plastic with heat sink mounted in the bridge
Mounting position: Bolt down on heat-sink with silicone thermal
compound between bridge and mounting surface
Terminals: Either nickel plated 0.25"(6.35 mm) Faston
lugs or 0.040"(1.02 mm) diameter copper leads.
Weight: 15 grams or 0.53 ounces
Mounting torque: 20 inch-lbs max
Mounting torque: 20 inch lbs max
Polarity: Marked on body
Maximum ratings, at T
uses GBPC-W package)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
Silicon Bridge
Rectifier
• Void-free junction by using vacuum soldering
Parameter
RRM
j
= 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW
Symbol
Symbol
V
V
R
I
V
T
F,SM
V
RRM
RMS
I
T
I
thJC
DC
stg
F
R
F
j
T
V
V
I
C
F
R
R
= 25 °C, t
= 7.5 A, T
= 50 V, T
= 50 V, T
Conditions
Conditions
T
C
≤ 55 °C
p
j
j
j
= 125 °C
= 8.3 ms
= 25 °C
= 25 °C
GBPC1506T/W thru GBPC1510T/W
1
GBPC1506T/W
GBPC1506T/W
-55 to 150
-55 to 150
600
420
600
300
500
1.1
1.9
15
5
GBPC1508T/W
GBPC1508T/W
-55 to 150
-55 to 150
800
560
800
300
500
1.1
1.9
15
5
V
I
F
RRM
= 15 A
GBPC-T/W Package
= 50 V - 1000 V
GBPC1510T/W
GBPC1510T/W
-55 to 150
-55 to 150
1000
1000
700
300
500
1.1
1.9
15
5
°C/W
Unit
Unit
μA
°C
°C
V
V
V
A
A
V
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GBPC1506T/W Summary of contents
Page 1
... I F,SM current, Half Sine Wave Operating temperature T Storage temperature Electrical characteristics °C, unless otherwise specified Parameter Symbol V Diode forward voltage Reverse current Thermal characteristics Thermal resistance, junction - R case www.genesicsemi.com GBPC1506T/W thru GBPC1510T/W Conditions GBPC1506T/W RRM RMS DC T ≤ 55 ° ° 8 -55 to 150 ...
Page 2
... GBPC1506T/W thru GBPC1510T/W 2 ...