1N5308 Central Semiconductor, 1N5308 Datasheet

1N5308

Manufacturer Part Number

1N5308

Description

Current Regulator Diodes 2.7mA Curr Reg

Manufacturer

Central Semiconductor

Datasheet

1.1N5313.pdf (2 pages)

Specifications of 1N5308

Maximum Regulator Current

2.97 mA

Maximum Limiting Voltage

2.15 V

Maximum Peak Operating Voltage

100 V

Minimum Dynamic Impedance

0.32 MOhms

Minimum Knee Impedance

0.035 MOhms

Configuration

Single

Mounting Style

Through Hole

Package / Case

DO-35

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

1N5308-1JANTX

Manufacturer:

Microsemi

Quantity:

1 400

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Download datasheet (337Kb)

ELECTRICAL CHARACTERISTICS: (T A =25°C)

Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided by I P NOM (mA)

FEATURES:

• High Reliability

• Special Selections Available

MAXIMUM RATINGS: (T L =75°C)

Peak Operating Voltage

Power Dissipation

Operating and Storage Junction Temperature

SILICON CURRENT LIMITING DIODE

1N5283

1N5284

1N5285

1N5286

1N5287

1N5288

1N5289

1N5290

1N5291

1N5292

1N5293

1N5294

1N5295

1N5296

1N5297

1N5298

Type

1N5283 THRU 1N5314

DO-35 CASE

0.198

0.216

0.243

0.270

0.297

0.351

0.387

0.423

0.504

0.558

0.612

0.675

0.738

0.819

0.900

0.990

MIN

I P @ V T =25V

Regulator

(Note 1)

Current

NOM

0.22

0.24

0.27

0.30

0.33

0.39

0.43

0.47

0.56

0.62

0.68

0.75

0.82

0.91

1.00

1.10

0.242

0.264

0.297

0.330

0.363

0.429

0.473

0.517

0.616

0.682

0.748

0.825

0.902

1.001

MAX

1.10

1.21

• Superior Lot To Lot Consistency

• Surface Mount Devices Available

Z T @ V T =25V

Impedance

Minimum

Dynamic

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 1N5283 series

types are silicon field effect current regulator diodes

designed for applications requiring a constant

current over a wide voltage range. These devices

are manufactured in the cost effective DO-35 double

plug case which provides many benefits to the

user, including space savings and improved thermal

characteristics. Special selections of I P (regulator

current) are available for critical applications.

SYMBOL

T J , T stg

1.90

1.55

1.35

1.15

1.00

0.88

0.80

0.70

MΩ

9.0

6.6

4.1

3.3

2.7

P OV

P D

Z K @ V K =6.0V

Impedance

Minimum

-65 to +200

Knee

0.335

0.205

2.75

2.35

1.95

1.60

1.35

1.00

0.87

0.75

0.56

0.47

0.40

0.29

0.24

0.18

MΩ

100

600

w w w. c e n t r a l s e m i . c o m

V L @ I L =0.8 x I P MIN

R3 (24-May 2010)

UNITS

Maximum

Limiting

Voltage

°C

1.05

1.10

1.13

1.15

1.20

1.25

1.29

1.35

1.40

1.0

Related parts for 1N5308

1N5308 Summary of contents

Page 1

... Notes: (1) Pulsed Method: Pulse Width (ms) = 27.5 divided NOM (mA) DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5283 series types are silicon field effect current regulator diodes designed for applications requiring a constant current over a wide voltage range. These devices are manufactured in the cost effective DO-35 double ...

Page 2

... DO-35 CASE - MECHANICAL OUTLINE ...

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