BD652S Bourns Inc., BD652S Datasheet

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BD652S

Manufacturer Part Number
BD652S
Description
Darlington Transistors 120V 8A PNP
Manufacturer
Bourns Inc.
Datasheet
1.BD652S.pdf (4 pages)

Specifications of BD652S

Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Package / Case
TO-220
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
140 V
Maximum Dc Collector Current
8 A
Maximum Collector Cut-off Current
200 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
750
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
●
●
●
●
R O D U C T
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0, R
FE
E
S
of 750 at 3 V, 3 A
= 0)
B
= 0.1 Ω, V
I N F O R M A T I O N
= 0)
p
≤ 0.3 ms, duty cycle ≤ 10%.
CC
= -20 V.
RATING
C
E
B
Pin 2 is in electrical contact with the mounting base.
PNP SILICON POWER DARLINGTONS
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
BD646, BD648, BD650, BD652
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
½LI
V
V
V
T
I
P
P
CBO
CEO
EBO
CM
T
I
I
T
C
stg
B
tot
tot
L
j
C
B(on)
2
1
2
3
= -5 mA, R
-65 to +150
-65 to +150
VALUE
-100
-120
-140
-100
-120
62.5
-0.3
260
-80
-60
-80
-12
50
-5
-8
2
BE
= 100 Ω,
MDTRACA
UNIT
mJ
°C
°C
°C
W
W
V
V
V
A
A
A
1

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BD652S Summary of contents

Page 1

Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62 25°C Case Temperature ● Continuous Collector Current ● Minimum h of 750 absolute maximum ratings at 25°C ...

Page 2

BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter -30 mA (BR)CEO C breakdown voltage Collector-emitter ...

Page 3

TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 50000 10000 1000 300 µs, duty cycle < 100 -0·5 -1· Collector Current - A C Figure 1. -3·0 -2·5 -2·0 -1·5 ...

Page 4

BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS -10 -1·0 -0·1 -0.01 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA BD646 BD648 BD650 BD652 -1·0 -10 -100 V - Collector-Emitter Voltage - V CE Figure 4. THERMAL INFORMATION ...

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