UMC3NT1 ON Semiconductor, UMC3NT1 Datasheet

Digital Transistors 100mA Complementary

UMC3NT1

Manufacturer Part Number
UMC3NT1
Description
Digital Transistors 100mA Complementary
Manufacturer
ON Semiconductor
Datasheet

Specifications of UMC3NT1

Configuration
Dual Common Base and Collector
Transistor Polarity
PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Package / Case
SC-88A/SOT-353
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
100 mA
Peak Dc Collector Current
100 mA
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UMC3NT1
Manufacturer:
ON
Quantity:
3 396
Part Number:
UMC3NT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
UMC3NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
UMC3NT1G
Manufacturer:
ON
Quantity:
14 946
UMC2NT1G, UMC3NT1G,
UMC5NT1G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1G series, two
complementary BRT devices are housed in the SOT−353 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
MAXIMUM RATINGS
and Q
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 8
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Thermal Resistance − Junction-to-Ambient
(surface mounted)
Operating and Storage Temperature Range
Total Package Dissipation
@ T
The Bias Resistor Transistor (BRT) contains a single transistor with
Compliant
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
minimum recommended footprint.
A
2
, − minus sign for Q
= 25°C (Note 1)
Rating
(T
1
A
(PNP) omitted)
= 25°C unless otherwise noted, common for Q
Preferred Devices
Symbol
T
V
V
R
J
P
CBO
CEO
, T
I
qJA
C
D
stg
−65 to
Value
+150
*150
100
833
50
50
1
mAdc
°C/W
Unit
mW
Vdc
Vdc
°C
1
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
SC−88A/SOT−353
Q1
ORDERING INFORMATION
CASE 419A
Ux
x
M
G
STYLE 6
3
4
http://onsemi.com
R1
R2
= Device Marking
= 2, 3 or 5
= Date Code
= Pb−Free Package
2
Publication Order Number:
R1
R2
5
1
MARKING
DIAGRAM
UMC2NT1/D
Q2
1
Ux M G
5
2
G
4
3

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UMC3NT1 Summary of contents

Page 1

... UMC2NT1G, UMC3NT1G, UMC5NT1G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network ...

Page 2

... L = 1.0 kW) L UMC2NT1G UMC3NT1G UMC5NT1G / T2G UMC2NT1G UMC3NT1G UMC5NT1G / T2G = UMC2NT1G UMC3NT1G UMC5NT1G / T2G = 2.0 mA UMC2NT1G UMC3NT1G UMC5NT1G / T2G = 0.3 mA 1.0 kW 1.0 kW) L UMC2NT1G UMC3NT1G UMC5NT1G / T2G UMC2NT1G UMC3NT1G UMC5NT1G / T2G http://onsemi.com 2 Symbol Min Typ Max I − − 100 ...

Page 3

... UMC3NT2G UMC5NT1G UMC5NT2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING AND RESISTOR VALUES Device Marking UMC2NT1G UMC3NT1G UMC3NT2G UMC5NT1G UMC5NT2G 250 200 150 100 50 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1G PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1G NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 6

... TYPICAL ELECTRICAL CHARACTERISTICS — UMC3NT1G PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat REVERSE BIAS VOLTAGE (V) R Figure 14. Output Capacitance 100 0.1 0 1000 100 25° 100 75° MHz 25° 0.1 0.01 0.001 Figure 15. Output Current versus Input = 0 ...

Page 7

... TYPICAL ELECTRICAL CHARACTERISTICS — UMC3NT1G NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat REVERSE BIAS VOLTAGE (V) R Figure 19. Output Capacitance 100 0.1 0 1000 25°C 75°C 100 100 MHz 25° 0.1 0.01 0.001 Figure 20. Output Current versus Input Voltage = 0 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS — UMC5NT1G PNP TRANSISTOR 0.1 0. COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat SERIES 1 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS — UMC5NT1G NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 26. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 10

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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