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NSBC114YPDXV6T5
NSBC114YPDXV6T5 | |
|---|---|
| Manufacturer Part Number | NSBC114YPDXV6T5 |
| Description | Digital Transistors 100mA Complementary |
| Manufacturer | ON Semiconductor |
| NSBC114YPDXV6T5 datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
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Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of NSBC114YPDXV6T5 | |||
|---|---|---|---|
| Configuration | Dual | Transistor Polarity | PNP |
| Typical Input Resistor | 10 KOhms | Typical Resistor Ratio | 0.21 |
| Mounting Style | SMD/SMT | Package / Case | SOT-563-6 |
| Collector- Emitter Voltage Vceo Max | 50 V | Continuous Collector Current | 0.1 A |
| Peak Dc Collector Current | 100 mA | Power Dissipation | 357 mW |
| Maximum Operating Temperature | + 150 C | Minimum Operating Temperature | - 55 C |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | ||
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DEVICE MARKING AND RESISTOR VALUES
Device
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G (Note 2)
NSBC143TPDXV6T1G (Note 2)
NSBC113EPDXV6T1G (Note 2)
NSBC123EPDXV6T1G (Note 2)
NSBC143EPDXV6T1G (Note 2)
NSBC143ZPDXV6T1G (Note 2)
NSBC124XPDXV6T1G (Note 2)
NSBC123JPDXV6T1G (Note 2)
ELECTRICAL CHARACTERISTICS
(T
= 25°C unless otherwise noted, common for Q
A
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
= 50 V, I
CB
Collector-Emitter Cutoff Current (V
= 50 V, I
CE
Emitter-Base Cutoff Current
(V
= 6.0 V, I
= 0)
EB
C
Collector-Base Breakdown Voltage (I
= 10 mA, I
C
Collector-Emitter Breakdown Voltage (Note 3) (I
ON CHARACTERISTICS (Note 3)
DC Current Gain
(V
= 10 V, I
= 5.0 mA)
CE
C
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Package
Marking
SOT−563
11
SOT−563
12
SOT−563
13
SOT−563
14
SOT−563
15
SOT−563
16
SOT−563
30
SOT−563
31
SOT−563
32
SOT−563
33
SOT−563
34
SOT−563
35
and Q
, − minus sign for Q
(PNP) omitted)
1
2
1
Symbol
= 0)
I
E
CBO
= 0)
I
B
CEO
NSBC114EPDXV6T1G
I
EBO
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
= 0)
V
(BR)CBO
E
= 2.0 mA, I
= 0)
V
C
B
(BR)CEO
NSBC114EPDXV6T1G
h
FE
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
http://onsemi.com
2
R1 (kW)
R2 (kW)
10
10
22
22
47
47
10
47
10
∞
4.7
∞
1.0
1.0
2.2
2.2
4.7
4.7
4.7
47
22
47
2.2
47
Min
Typ
Max
Unit
−
−
100
nAdc
−
−
500
nAdc
−
−
0.5
mAdc
−
−
0.2
−
−
0.1
−
−
0.2
−
−
0.9
−
−
1.9
−
−
4.3
−
−
2.3
−
−
1.5
−
−
0.18
−
−
0.13
−
−
0.2
50
−
−
Vdc
50
−
−
Vdc
35
60
−
60
100
−
80
140
−
80
140
−
160
350
−
160
350
−
3.0
5.0
−
8.0
15
−
15
30
−
80
200
−
80
150
−
80
140
−
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