Digital Transistors 100mA Complementary

 

NSBC114YPDXV6T5

Manufacturer Part NumberNSBC114YPDXV6T5
DescriptionDigital Transistors 100mA Complementary
ManufacturerON Semiconductor
NSBC114YPDXV6T5 datasheets

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Specifications of NSBC114YPDXV6T5

ConfigurationDualTransistor PolarityPNP
Typical Input Resistor10 KOhmsTypical Resistor Ratio0.21
Mounting StyleSMD/SMTPackage / CaseSOT-563-6
Collector- Emitter Voltage Vceo Max50 VContinuous Collector Current0.1 A
Peak Dc Collector Current100 mAPower Dissipation357 mW
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR
10
I
/I
= 10
C
B
1
T
= -25°C
A
0.1
0.01
0
20
I
, COLLECTOR CURRENT (mA)
C
Figure 22. V
versus I
CE(sat)
1
0.8
0.6
0.4
0.2
0
0
10
20
30
V
, REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 24. Output Capacitance
100
V
O
10
1
0.1
0
Figure 26. Input Voltage versus Output Current
1000
25°C
100
75°C
10
40
50
1
C
100
f = 1 MHz
I
= 0 V
E
10
T
= 25°C
A
1
0.1
0.01
0.001
40
50
0
Figure 25. Output Current versus Input Voltage
= 0.2 V
T
= -25°C
A
25°C
75°C
10
20
30
40
I
, COLLECTOR CURRENT (mA)
C
http://onsemi.com
9
V
= 10 V
CE
T
= 75°C
A
25°C
-25°C
10
I
, COLLECTOR CURRENT (mA)
C
Figure 23. DC Current Gain
25°C
75°C
T
= -25°C
A
V
= 5 V
O
2
4
6
8
V
, INPUT VOLTAGE (VOLTS)
in
50
100
10

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