Digital Transistors 100mA 50V Dual PNP

 

NSBA115EDXV6T1

Manufacturer Part NumberNSBA115EDXV6T1
DescriptionDigital Transistors 100mA 50V Dual PNP
ManufacturerON Semiconductor
NSBA115EDXV6T1 datasheets

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Specifications of NSBA115EDXV6T1

ConfigurationDualTransistor PolarityPNP
Typical Input Resistor100 KOhmsTypical Resistor Ratio1
Mounting StyleSMD/SMTPackage / CaseSOT-563-6
Collector- Emitter Voltage Vceo Max50 VContinuous Collector Current- 0.1 A
Peak Dc Collector Current100 mAPower Dissipation357 mW
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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NSBA114EDXV6T1,
NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBA114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low−power surface mount applications where board space is
at a premium.
Features
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
These are Pb−Free Devices
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted, common for Q
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation @ T
= 25°C
A
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation @ T
= 25°C
A
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Junction and Storage Temperature
Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 6
and Q
)
1
2
Symbol
Value
Unit
V
−50
Vdc
CBO
V
−50
Vdc
CEO
I
−100
mAdc
C
Symbol
Max
Unit
P
357
mW
D
2.9
mW/°C
°C/W
R
350
qJA
NSBA1xxxDXV6T1
NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel
NSBA1xxxDXV6T5
Symbol
Max
Unit
NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel
P
500
mW
D
4.0
mW/°C
†For information on tape and reel specifications,
°C/W
including part orientation and tape sizes, please
R
250
qJA
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
°C
T
, T
−55 to
J
stg
**This package is inherently Pb−Free.
+150
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
http://onsemi.com
(3)
(2)
(1)
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
SOT−563
CASE 463A
PLASTIC
1
STYLE 1
MARKING DIAGRAM
xx M G
G
xx = Device Code
(Refer to page 2)
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Shipping
Device
Package
SOT−563* 4000/Tape & Reel
SOT−563* 8000/Tape & Reel
DEVICE MARKING INFORMATION
Publication Order Number:
NSBA114EDXV6/D
†

Related parts for NSBA115EDXV6T1

Part Number DescriptionManufacturer Datasheet
NSBA115EDXV6T1G  NSBA115EDXV6T1G TRANS BRT PNP DUAL 50V SOT-563 ON Semiconductor
NSBA115EDXV6T5  NSBA115EDXV6T5 Digital Transistors 100mA 50V Dual PNP ON Semiconductor
NSBA115EDXV6T5G  NSBA115EDXV6T5G Digital Transistors 100mA 50V Dual PNP ON Semiconductor
NSBA114EDP6T5G  NSBA114EDP6T5G TRANS BRT PNP DUAL DGTL SOT-963 ON Semiconductor
NSBA114YDP6T5G  NSBA114YDP6T5G TRANS BRT PNP DUAL 50V SOT-963 ON Semiconductor
NSBA114EDXV6T1G  NSBA114EDXV6T1G TRANS BRT PNP DUAL 50V SOT-563 ON Semiconductor
NSBA114YDXV6T1G  NSBA114YDXV6T1G TRANS BRT PNP DUAL 50V SOT563 ON Semiconductor
NSBA114YDXV6T1  NSBA114YDXV6T1 TRANS BRT PNP DUAL 50V SOT563 ON Semiconductor
NSBA114TDXV6T5  NSBA114TDXV6T5 TRANS BRT PNP DUAL 50V SOT563 ON Semiconductor
NSBA114EDXV6T5  NSBA114EDXV6T5 TRANS BRT PNP DUAL 50V SOT563 ON Semiconductor
NSBC143ZDXV6T1G  NSBC143ZDXV6T1G TRANS BRT NPN DUAL 50V SOT563 ON Semiconductor
NSBC114EPDXV6T1G  NSBC114EPDXV6T1G TRANS BR NPN/PNP DUAL 50V SOT563 ON Semiconductor
NSBC114EDXV6T1G  NSBC114EDXV6T1G TRANS BRT NPN DUAL 50V SOT563 ON Semiconductor
NSBC123JPDXV6T1G  NSBC123JPDXV6T1G TRANS BR NPN/PNP DUAL 50V SOT563 ON Semiconductor
NSBC143TPDXV6T1G  NSBC143TPDXV6T1G TRANS BR NPN/PNP DUAL 50V SOT563 ON Semiconductor

NSBA115EDXV6T1 Summary of contents

  • Page 1

    ... The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBA114EDXV6T1 series, two BRT devices are housed in the SOT− ...

  • Page 2

    ... NSBA143EDXV6T1 / T5 (Note 2) NSBA143ZDXV6T1 / T5 (Note 2) NSBA124XDXV6T1 / T5 (Note 2) NSBA123JDXV6T1 / T5 (Note 2) NSBA115EDXV6T1 / T5 (Note 2) NSBA144WDXV6T1 (Note 2) *The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1. 2. New resistor combinations. Updated curves to follow in subsequent data sheets. ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (V = − ...

  • Page 3

    ... NSBA144EDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 = 1.0 kW NSBA113EDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA123EDXV6T1 NSBA143ZDXV6T1 NSBA114EDXV6T1 R 1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 NSBA114YDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA144WDXV6T1 http://onsemi.com 3 and Q ) (continued Min Typ Max Unit 35 60 − 60 100 − ...

  • Page 4

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES ALL NSBA114EDXV6T1 SERIES DEVICES 300 250 200 150 100 R = 490°C/W 50 qJA 0 − AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve − ALL DEVICES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1 1000 ...

  • Page 5

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

  • Page 6

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1 −25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 ...

  • Page 7

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...

  • Page 8

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114TDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 22. DC Current Gain TYPICAL ELECTRICAL CHARACTERISTICS — NSBA143TDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 23. DC ...

  • Page 9

    ... NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 24. Maximum Collector Voltage versus Collector Current 1.2 1.0 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 26. Output Capacitance 100 25°C 10 75° Figure 28. Input Voltage versus Output Current ...

  • Page 10

    NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144WDXV6T1 −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 29. Maximum Collector Voltage versus Collector Current 1.4 1.2 1.0 ...

  • Page 11

    ... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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