Digital Transistors 100mA 50V Dual PNP

 

NSBA115EDXV6T1

Manufacturer Part NumberNSBA115EDXV6T1
DescriptionDigital Transistors 100mA 50V Dual PNP
ManufacturerON Semiconductor
NSBA115EDXV6T1 datasheets

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Specifications of NSBA115EDXV6T1

ConfigurationDualTransistor PolarityPNP
Typical Input Resistor100 KOhmsTypical Resistor Ratio1
Mounting StyleSMD/SMTPackage / CaseSOT-563-6
Collector- Emitter Voltage Vceo Max50 VContinuous Collector Current- 0.1 A
Peak Dc Collector Current100 mAPower Dissipation357 mW
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144WDXV6T1
1
T
= −25°C
A
0.1
25°C
0.01
0
5
10
15
20
25
30
I
, COLLECTOR CURRENT (mA)
C
Figure 29. Maximum Collector Voltage versus
Collector Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
V
, REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 31. Output Capacitance
100
10
25°C
1
0
Figure 33. Input Voltage versus Output Current
1000
75°C
100
I
/I
= 10
C
B
10
35
40
45
50
1
I
C
Figure 30. DC Current Gain
100
f = 1 MHz
I
= 0 V
E
10
T
= 25°C
A
1
0.1
0.01
0.001
0
1
2
50
60
V
Figure 32. Output Current versus Input Voltage
V
= 0.2 V
O
T
= −25°C
A
75°C
5
10
15
20
I
, COLLECTOR CURRENT (mA)
C
http://onsemi.com
10
75°C
T
= −25°C
A
25°C
V
= 10 V
CE
10
100
, COLLECTOR CURRENT (mA)
75°C
T
= −25°C
A
25°C
V
= 5 V
O
3
4
5
6
7
8
9
10
11
, INPUT VOLTAGE (VOLTS)
in
25

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