Digital Transistors 100mA 50V Dual PNP

 

NSBA115EDXV6T1

Manufacturer Part NumberNSBA115EDXV6T1
DescriptionDigital Transistors 100mA 50V Dual PNP
ManufacturerON Semiconductor
NSBA115EDXV6T1 datasheets

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Specifications of NSBA115EDXV6T1

ConfigurationDualTransistor PolarityPNP
Typical Input Resistor100 KOhmsTypical Resistor Ratio1
Mounting StyleSMD/SMTPackage / CaseSOT-563-6
Collector- Emitter Voltage Vceo Max50 VContinuous Collector Current- 0.1 A
Peak Dc Collector Current100 mAPower Dissipation357 mW
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
DEVICE MARKING AND RESISTOR VALUES
Device*
NSBA114EDXV6T1 / T5
NSBA124EDXV6T1 / T5
NSBA144EDXV6T1 / T5
NSBA114YDXV6T1 / T5
NSBA114TDXV6T1 / T5
(Note 2)
NSBA143TDXV6T1 / T5
(Note 2)
NSBA113EDXV6T1 / T5
(Note 2)
NSBA123EDXV6T1 / T5
(Note 2)
NSBA143EDXV6T1 / T5
(Note 2)
NSBA143ZDXV6T1 / T5
(Note 2)
NSBA124XDXV6T1 / T5
(Note 2)
NSBA123JDXV6T1 / T5
(Note 2)
NSBA115EDXV6T1 / T5
(Note 2)
NSBA144WDXV6T1
(Note 2)
*The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
= −50 V, I
CB
Collector-Emitter Cutoff Current (V
= −50 V, I
CE
Emitter-Base Cutoff Current
(V
= −6.0 V, I
= 0)
EB
C
= −10 mA, I
Collector-Base Breakdown Voltage (I
C
Collector-Emitter Breakdown Voltage (Note 3) (I
ON CHARACTERISTICS (Note 3)
Collector-Emitter Saturation Voltage (I
= −10 mA, I
C
(I
= −10 mA, I
= −5 mA)
NSBA113EDXV6T1/NSBA123EDXV6T1
C
B
(I
= −10 mA, I
= −1 mA)
NSBA114TDXV6T1/NSBA143TDXV6T1
C
B
NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Package
Marking
SOT−563
0A
SOT−563
0B
SOT−563
0C
SOT−563
0D
SOT−563
0E
SOT−563
0F
SOT−563
0G
SOT−563
0H
SOT−563
0J
SOT−563
0K
SOT−563
0L
SOT−563
0M
SOT−563
0N
SOT−563
0P
(T
= 25°C unless otherwise noted, common for Q
A
Symbol
= 0)
I
E
CBO
= 0)
I
B
CEO
NSBA114EDXV6T1
I
EBO
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
= 0)
V
E
(BR)CBO
= −2.0 mA, I
= 0)
V
C
B
(BR)CEO
= −0.3 mA)
V
E
CE(sat)
http://onsemi.com
2
R1 (kW)
R2 (kW)
10
10
22
22
47
47
10
47
10
4.7
1.0
1.0
2.2
2.2
4.7
4.7
4.7
47
22
47
2.2
47
100
100
47
22
and Q
)
1
2
Min
Typ
Max
Unit
−100
nAdc
−500
nAdc
−0.5
mAdc
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
−50
Vdc
−50
Vdc
−0.25
Vdc