Digital Transistors 100mA 50V Dual PNP

 

NSBA115EDXV6T1

Manufacturer Part NumberNSBA115EDXV6T1
DescriptionDigital Transistors 100mA 50V Dual PNP
ManufacturerON Semiconductor
NSBA115EDXV6T1 datasheets

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Specifications of NSBA115EDXV6T1

ConfigurationDualTransistor PolarityPNP
Typical Input Resistor100 KOhmsTypical Resistor Ratio1
Mounting StyleSMD/SMTPackage / CaseSOT-563-6
Collector- Emitter Voltage Vceo Max50 VContinuous Collector Current- 0.1 A
Peak Dc Collector Current100 mAPower Dissipation357 mW
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Download datasheet (102Kb)Embed
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
ALL NSBA114EDXV6T1 SERIES DEVICES
300
250
200
150
100
R
= 490°C/W
50
qJA
0
−50
0
50
T
, AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve − ALL DEVICES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1
1000
100
10
1
10
I
, COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
100
25°C
75°C
T
= −25°C
10
A
1
0.1
0.01
0.001
0
1
2
3
4
5
6
V
, INPUT VOLTAGE (VOLTS)
in
Figure 5. Output Current versus Input Voltage
TYPICAL ELECTRICAL CHARACTERISTICS
1
I
/I
C
B
0.1
0.01
0
100
150
4
V
= 10 V
CE
3
T
= 75°C
A
25°C
2
−25°C
1
0
100
0
100
V
= 0.2 V
O
10
1
V
= 5 V
O
0.1
0
7
8
9
10
Figure 6. Input Voltage versus Output Current
http://onsemi.com
4
— NSBA114EDXV6T1
= 10
T
= −25°C
A
25°C
75°C
20
40
I
, COLLECTOR CURRENT (mA)
C
Figure 2. V
versus I
CE(sat)
C
f = 1 MHz
l
= 0 V
E
T
= 25°C
A
10
20
30
40
V
, REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 4. Output Capacitance
T
= −25°C
A
25°C
75°C
10
20
30
40
I
, COLLECTOR CURRENT (mA)
C
50
50
50

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