Digital Transistors 100mA 50V Dual PNP

 

NSBA115EDXV6T1

Manufacturer Part NumberNSBA115EDXV6T1
DescriptionDigital Transistors 100mA 50V Dual PNP
ManufacturerON Semiconductor
NSBA115EDXV6T1 datasheets

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Specifications of NSBA115EDXV6T1

ConfigurationDualTransistor PolarityPNP
Typical Input Resistor100 KOhmsTypical Resistor Ratio1
Mounting StyleSMD/SMTPackage / CaseSOT-563-6
Collector- Emitter Voltage Vceo Max50 VContinuous Collector Current- 0.1 A
Peak Dc Collector Current100 mAPower Dissipation357 mW
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1
1
I
/I
= 10
C
B
T
0.1
75°C
0.01
0.001
0
20
40
I
, COLLECTOR CURRENT (mA)
C
Figure 17. V
versus I
CE(sat)
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15 20
25 30
V
, REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 19. Output Capacitance
10
V
O
1
0.1
0
Figure 21. Input Voltage versus Output Current
180
V
= 10 V
160
CE
= −25°C
A
140
25°C
120
100
80
60
40
20
0
60
80
1
2
4
C
100
f = 1 MHz
l
= 0 V
E
T
= 25°C
A
10
1
35 40
45 50
0
Figure 20. Output Current versus Input Voltage
= 0.2 V
25°C
T
= −25°C
A
75°C
10
20
30
40
I
, COLLECTOR CURRENT (mA)
C
http://onsemi.com
7
T
= 75°C
A
25°C
−25°C
6
8
10
15 20 40 50 60 70 80 90
I
, COLLECTOR CURRENT (mA)
C
Figure 18. DC Current Gain
T
= 75°C
A
25°C
−25°C
V
= 5 V
O
2
4
6
8
V
, INPUT VOLTAGE (VOLTS)
in
50
100
10

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