Digital Transistors 100mA 50V Dual PNP

 

NSBA115EDXV6T1

Manufacturer Part NumberNSBA115EDXV6T1
DescriptionDigital Transistors 100mA 50V Dual PNP
ManufacturerON Semiconductor
NSBA115EDXV6T1 datasheets

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Specifications of NSBA115EDXV6T1

ConfigurationDualTransistor PolarityPNP
Typical Input Resistor100 KOhmsTypical Resistor Ratio1
Mounting StyleSMD/SMTPackage / CaseSOT-563-6
Collector- Emitter Voltage Vceo Max50 VContinuous Collector Current- 0.1 A
Peak Dc Collector Current100 mAPower Dissipation357 mW
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1
1
0.1
−25°C
0.01
0
1
2
3
4
I
, COLLECTOR CURRENT (mA)
C
Figure 24. Maximum Collector Voltage versus
Collector Current
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
V
, REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 26. Output Capacitance
100
25°C
10
75°C
1
0
2
Figure 28. Input Voltage versus Output Current
1000
100
75°C
25°C
10
I
/I
= 10
C
B
1
5
6
7
1
I
, COLLECTOR CURRENT (mA)
C
Figure 25. DC Current Gain
100
f = 1 MHz
10
I
= 0 V
E
T
= 25°C
A
1
0.1
0
1
2
50
60
V
in
Figure 27. Output Current versus Input Voltage
T
= −25°C
A
V
= 0.2 V
O
4
6
8
10
12
14
16
18
I
, COLLECTOR CURRENT (mA)
C
http://onsemi.com
9
75°C
T
= −25°C
A
25°C
V
= 10 V
CE
10
100
25°C
75°C
T
= −25°C
A
V
= 5 V
O
3
4
5
6
7
8
9
10
, INPUT VOLTAGE (VOLTS)
20

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