Digital Transistors TRANS RET TAPE-7

PDTC115EM T/R

Manufacturer Part NumberPDTC115EM T/R
DescriptionDigital Transistors TRANS RET TAPE-7
ManufacturerNXP Semiconductors
PDTC115EM T/R datasheet
 


Specifications of PDTC115EM T/R

ConfigurationSingleTransistor PolarityNPN
Typical Input Resistor100 KOhmsTypical Resistor Ratio1
Mounting StyleSMD/SMTPackage / CaseSOT-883-3
Collector- Emitter Voltage Vceo Max50 VPeak Dc Collector Current20 mA
Maximum Operating Temperature+ 150 CMinimum Operating Temperature- 65 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesPDTC115EM,315
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NXP Semiconductors
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
TYPE NUMBER
PHILIPS
PDTC115EE
SOT416
PDTC115EEF
SOT490
PDTC115EK
SOT346
PDTC115EM
SOT883
PDTC115ES
SOT54 (TO-92)
PDTC115ET
PDTC115EU
SOT323
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 06
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
R1
R2
DESCRIPTION
NPN resistor equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PACKAGE
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
SOT23
SC-70
2
Product data sheet
PDTC115E series
PARAMETER
TYP.
MAX.
collector-emitter
50
voltage
output current (DC)
20
bias resistor
100
bias resistor
100
MARKING CODE
PNP COMPLEMENT
46
PDTA115EE
49
PDTA115EEF
56
PDTA115EK
DV
PDTA115EM
TC115E
PDTA115ES
(1)
*44
PDTA115ET
(1)
*15
PDTA115EU
UNIT
V
mA