PBRP113ZT T/R NXP Semiconductors, PBRP113ZT T/R Datasheet

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PBRP113ZT T/R

Manufacturer Part Number
PBRP113ZT T/R
Description
Digital Transistors BISS RET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBRP113ZT T/R

Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
1 KOhms
Typical Resistor Ratio
0.1
Mounting Style
SMD/SMT
Package / Case
TO-236AB-3
Collector- Emitter Voltage Vceo Max
40 V
Peak Dc Collector Current
600 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PBRP113ZT,215
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
800 mA PNP low V
Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBRN113ZT.
I
I
I
I
I
I
Table 1.
[1]
[2]
[3]
Symbol
V
I
I
R1
R2/R1
O
ORM
CEO
PBRP113ZT
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 10 k
Rev. 01 — 16 January 2008
800 mA repetitive peak output current
High current gain h
Built-in bias resistors
Simplifies circuit design
Digital application in automotive and
industrial segments
Medium current peripheral driver
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm
Device mounted on a ceramic PCB, Al
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Quick reference data
Parameter
collector-emitter voltage
output current
repetitive peak output current t
bias resistor 1 (input)
bias resistor ratio
2
.
CEsat
FE
Breakthrough In Small Signal (BISS) Resistor-Equipped
2
O
3
, standard footprint.
Conditions
open base
p
0.33
1 ms;
I
I
I
I
I
Low collector-emitter saturation voltage
V
Reduces component count
Reduces pick and place costs
Switching loads
10 % resistor ratio tolerance
CEsat
[1][2]
[3]
Min
-
-
-
0.7
9
Typ
-
-
-
1
10
Product data sheet
Max
1.3
11
40
600
800
Unit
V
mA
mA
k

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PBRP113ZT T/R Summary of contents

Page 1

PBRP113ZT PNP 800 mA BISS RET Rev. 01 — 16 January 2008 1. Product profile 1.1 General description 800 mA PNP low V Transistor (RET small SOT23 ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBRP113ZT 4. Marking Table 4. Type number PBRP113ZT [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol P tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [2] Device mounted on a ceramic PCB, Al [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB th(j-a) 0.75 (K/W) 0.50 ...

Page 5

... NXP Semiconductors th(j- (K/W) 0.75 0. 0.33 0.20 0.10 0.05 10 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values th(j-a) (K/ 0. 0.50 0.33 0.20 0.10 0.05 10 0.02 ...

Page 6

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol I CBO I CEO I EBO CEsat V I(off) V I(on) R1 R2/ [1] Pulse test: t PBRP113ZT_1 Product data sheet PNP 800 mA BISS RET Characteristics Parameter Conditions collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current current gain ...

Page 7

... NXP Semiconductors 3 10 ( 100 C amb ( amb ( amb Fig 5. DC current gain as a function of collector current; typical values 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values PBRP113ZT_1 Product data sheet PNP 800 mA BISS RET ...

Page 8

... NXP Semiconductors 10 V I(on) (V) 1 (1) ( amb ( amb ( 100 C amb Fig 9. On-state input voltage as a function of collector current; typical values 8. Package outline Fig 11. Package outline SOT23 (TO-236AB) PBRP113ZT_1 Product data sheet PNP 800 mA BISS RET 006aab083 10 V I(off) ( (mA (1) T amb (2) T amb ...

Page 9

... NXP Semiconductors 9. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBRP113ZT [1] For further information and the availability of packing methods, see 10. Soldering Fig 12. Reflow soldering footprint SOT23 (TO-236AB) 4.60 Fig 13. Wave soldering footprint SOT23 (TO-236AB) ...

Page 10

... NXP Semiconductors 11. Revision history Table 9. Revision history Document ID Release date PBRP113ZT_1 20080116 PBRP113ZT_1 Product data sheet PNP 800 mA BISS RET Data sheet status Change notice Product data sheet - Rev. 01 — 16 January 2008 PBRP113ZT Supersedes - © NXP B.V. 2008. All rights reserved. ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 Legal information ...

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