PDTC115ET T/R NXP Semiconductors, PDTC115ET T/R Datasheet - Page 2

• Manufacturer Part Number: PDTC115ET T/R
• Description: Digital Transistors TRANS RET TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PDTC115ET T/R

• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 100 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-3
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 20 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PDTC115ET,215

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 06
PDTC115EE
PDTC115EEF
PDTC115EK
PDTC115EM
PDTC115ES
PDTC115ET
PDTC115EU
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
−
2
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
MARKING CODE
PARAMETER
TC115E
*44
*15
DV
46
49
56
(1)
(1)
PDTC115E series
−
−
100
100
PDTA115EE
PDTA115EEF
PDTA115EK
PDTA115EM
PDTA115ES
PDTA115ET
PDTA115EU
PNP COMPLEMENT
TYP.
Product data sheet
50
20
−
−
MAX.
V
mA
kΩ
kΩ
UNIT