EMC4DXV5T1 ON Semiconductor, EMC4DXV5T1 Datasheet

Digital Transistors 50V Dual Common Base

EMC4DXV5T1

Manufacturer Part Number
EMC4DXV5T1
Description
Digital Transistors 50V Dual Common Base
Manufacturer
ON Semiconductor
Datasheet

Specifications of EMC4DXV5T1

Configuration
Dual Common Base and Collector
Transistor Polarity
NPN
Typical Input Resistor
47 KOhms at NPN, 4.7 KOhms at PNP
Typical Resistor Ratio
1 at NPN, 0.47 at PNP
Mounting Style
SMD/SMT
Package / Case
SOT-553-5
Collector- Emitter Voltage Vceo Max
50 V
Continuous Collector Current
0.1 A
Peak Dc Collector Current
100 mA
Power Dissipation
357 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EMC4DXV5T1G
Manufacturer:
ON Semiconductor
Quantity:
2 950
EMC2DXV5T1G,
EMC3DXV5T1G,
EMC4DXV5T1G,
EMC5DXV5T1G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1 series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
and Q
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 6
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
The BRT (Bias Resistor Transistor) contains a single transistor with
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
2
, − minus sign for Q
Rating
(T
1
A
(PNP) omitted)
= 25°C unless otherwise noted, common for Q
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(Note: Microdot may be in either location)
Q1
ORDERING INFORMATION
Ux = Specific Device Code
M
G
3
4
MARKING DIAGRAM
= Date Code
= Pb−Free Package
http://onsemi.com
x = C, 3, E, or 5
5
R1
CASE 463B
R2
SOT−553
Ux M G
Publication Order Number:
2
G
R1
1
R2
EMC2DXV5T1/D
Q2
1
5

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EMC4DXV5T1 Summary of contents

Page 1

... EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network ...

Page 2

... DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES Transistor 1 − PNP Device Marking R1 (K) EMC2DXV5T1G UC EMC3DXV5T1G U3 EMC3DXV5T5G EMC4DXV5T1G UE EMC5DXV5T1G U5 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. 250 200 150 ...

Page 3

... Collector-Emitter Breakdown Voltage (I = 2.0 mA Current Gain ( 5.0 mA EMC4DXV5T1, EMC5DXV5T1 Collector−Emitter Saturation Voltage ( mA Output Voltage ( Output Voltage (off 5 0 Input Resistor EMC4DXV5T1, EMC5DXV5T1 Resistor Ratio EMC4DXV5T1, EMC5DXV5T1 (T = 25°C unless otherwise noted) A Symbol = CBO = CEO EMC2DXV5T1 I EBO EMC3DXV5T1 EMC4DXV5T1 EMC5DXV5T1 (BR)CBO = ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat ...

Page 8

... TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (V) R Figure 24. Output Capacitance 0 -25°C A 75° COLLECTOR CURRENT (mA) C Figure 26. Input Voltage versus Output Current ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS − EMC5DXV5T1 PNP TRANSISTOR 0.1 0. COLLECTOR CURRENT (mA) C Figure 28. V versus I CE(sat SERIES 1 ...

Page 10

... TYPICAL ELECTRICAL CHARACTERISTICS − EMC4DXV5T1, EMC5DXV5T1 NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (V) R Figure 34. Output Capacitance 100 0.1 0 Figure 36. Input Voltage versus Output Current 1000 25°C 100 75° 100 MHz ...

Page 11

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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