VMM1000-01P IXYS, VMM1000-01P Datasheet
VMM1000-01P
Manufacturer Part Number
VMM1000-01P
Description
Discrete Semiconductor Modules 1000 Amps 100V
Manufacturer
IXYS
Type
Trench Gate MOSFET Modules with lower Rds(on)r
Datasheet
1.VMM1000-01P.pdf
(2 pages)
Specifications of VMM1000-01P
Product
Power Semiconductor Modules
Mounting Style
Screw
Package / Case
Y3-Li
Vdss, Max, (v)
100
Id25, Tc = 25°c, (a)
1000
Id80, Tc = 80°c, (a)
800
Id90, Tc = 90°c, (a)
-
Rds(on), Max, Tj = 25°c, (mohms)
0.75
Tf, Typ, (ns)
100
Tr, Typ, (ns)
100
Rthjc, Max, (ºc/w)
0.06
Package Style
Y3-Li (low inductance)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VMM1000-01P
Manufacturer:
TI
Quantity:
1 200
Dual Trench
MOSFET Module
Phaseleg Configuration
Preliminary data
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
V
t
R
R
①
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
MOSFET T1 + T2
D25
D80
F25
F80
DSS
GSS
d(on)
r
d(off)
f
rr
DSS
GS
GSth
F
DSon
thJC
thJS
g
gs
gd
additional current limitation by external leads
Conditions
T
T
T
(diode) T
(diode) T
Conditions
V
V
V
V
(diode) I
(diode) I
with heat transfer paste
VJ
C
C
GS
DS
DS
GS
= 25°C
= 80°C
= 25°C to 150°C
V
V
I
= 10 V; I
= 20 V; I
= V
= ±20 V; V
D
GS
GS
= 250 A; R
= 10 V; V
= 10 V; V
DSS
F
F
C
C
= 200 A; -di/dt = 1000 A/µs; V
= 500 A; V
; V
= 25°C
= 80°C
D
D
GS
= 10 mA
= I
DS
= 0 V; T
D80
DS
DS
G
= 0 V
= 0.68 Ω
= 80 V; I
= 50 V;
GS
T
①
①
①
①
= 0 V
VJ
VJ
= 25°C
= 125°C
D
= 1000 A
(T
VJ
= 25°C, unless otherwise specified)
DS
= 30 V
min.
Characteristic Values
2
Maximum Ratings
2355
1000
0.75
0.12
11
10
495
100
260
100
100
typ.
8
9
1.5
1.0
50
1000
1000
100
±20
800
800
max.
0.15 mA
0.06 K/W
1.2 mΩ
1.5
1.5
4
K/W
mA
nC
nC
nC
µA
ns
ns
ns
ns
ns
V
V
A
A
A
A
V
V
3
1
2
V
I
R
Features
• Trench MOSFETs
• package
Applications
• converters with high power density for
D25
– low R
– optimized intrinsic reverse diode
– low inductive current path
– screw connection to high current
– use of non interchangeable
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
– main and auxiliary AC drives of
– 4 quadrant DC drives
– power supplies with low input voltage,
DSS
DS(on)
e.g. from fuel cells or solar cells
main terminals
connectors for auxiliary terminals
possible
electric vehicles
DSon
VMM 1000-01P
= 100 V
= 1000 A
= 0.75 mΩ Ω Ω Ω Ω
1 - 2
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VMM1000-01P Summary of contents
Page 1
... I = 200 A; -di/dt = 1000 A/µ thJC R with heat transfer paste thJS ① additional current limitation by external leads IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Maximum Ratings 100 ±20 ① 1000 ① 800 ① ...
Page 2
... RMS stg ≤ 1 mA; 50/ ISOL ISOL M Mounting torque (M6) d Terminal connection torque (M6) Symbol Conditions Weight © 2004 IXYS All rights reserved Dimensions 0.0394") Maximum Ratings 500 A °C -40...+175 °C -40...+125 3600 V~ 2.25 - 2.75 Nm 4.5 - 5.5 Nm Characteristic Values min. typ. ...