MWI300-12E9 IXYS, MWI300-12E9 Datasheet

MWI300-12E9

Manufacturer Part Number

MWI300-12E9

Description

Discrete Semiconductor Modules 300 Amps 1200V

Manufacturer

IXYS

Type

Six-Pack IGBT Modulesr

Datasheet

1.MWI300-12E9.pdf (5 pages)

Specifications of MWI300-12E9

Product

Power Semiconductor Modules

Mounting Style

Screw

Package / Case

E+

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MWI300-12E9

Manufacturer:

IXYS

Quantity:

1 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

MWI300-12E9

Quantity:

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IGBT Modules

Sixpack

IXYS reserves the right to change limits, test conditions and dimensions.

IGBTs

Symbol

RBSOA

(SCSOA)

Symbol

CES

GES

C25

C80

d(on)

d(off)

GE(th)

GES

CE(sat)

off

CES

tot

ies

thJC

Gon

Conditions

Clamped inductive load; L = 00 µH

Conditions

Inductive load, T

= 300 A; V

= 2 mA; V

= 25°C

= 80°C

= 25°C

= 3.3 Ω; T

= 25°C to 25°C

= 25°C; non-repetitive; V

= V

= 600 V; V

= 900 V; V

= 0 V; V

= 600 V; I

= ± 5 V; R

= 25 V; V

CES

; V

= ± 20 V

= 0 V

= 300 A

= 5 V

= 25°C

= 0 V; f = MHz

= V

= 3.3 Ω

= ± 5 V; R

= 5 V; I

= 25°C

= 300 A

= 3.3 Ω

CEmax

= 25°C

< V

= 25°C, unless otherwise specified)

CES

min.

4.5

Characteristic Values

Maximum Ratings

typ.

650

2.0

2.2

0.4

2.3

CEK

9/0

= 750

< V

200

max.

0.06

± 20

530

375

600

2.4

2.7

6.5

CES

K/W

µC

7/8

µs

See outline drawing for pin arrangement

Features

• NPT

• low saturation voltage

• low switching losses

• square RBSOA, no latch up

• high short circuit capability

• positive temperature coefficient for

• MOS input, voltage controlled

• ultra fast free wheeling diodes

• solderable pins for PCB mounting

• package with copper base plate

Advantages

• space savings

• reduced protection circuits

• package designed for wave soldering

Typical Applications

• AC motor control

• AC servo and robot drives

• power supplies

C80

easy parallelling

CES

CE(sat) typ.

IGBT technology

MWI 300-12 E9

= 375 A

= 1200 V

2.0 V

E72873

- 5

Related parts for MWI300-12E9

MWI300-12E9 Summary of contents

Page 1

... VJ d(off 600 300 ± 3.3 Ω off MHz ies 600 Gon thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved /2 9/ Maximum Ratings 200 ± 20 530 375 I = 750 CM V < V CEK = 3.3 Ω ...

Page 2

... Weight * ) ·I resp CEsat therm-chip C F IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 300 600 = 0 V 2400 R Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. ...

Page 3

... Dimensions 0.0394" 2.884·0 .523·0 7.67·0 0.03 0.036 IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved = tolerance for all dimensions: Diode IGBT τ ·0 2.344· 5·0 5.97· 0.02 5.97·0 ...

Page 4

... I = 100 -10 -15 - [µ Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 600 500 400 300 200 100 0 2.5 3.0 Fig. 2 Typ. transfer characteristics 600 500 400 300 9 V 200 ...

Page 5

... Fig. 0 Typ. turn off energy and switching times versus gate resistor single pulse 1 10 100 1000 [ms] t Fig. 2 Typ. transient thermal impedance 800 600 t d(off) 400 200 600 4500 4000 3500 3000 2500 2000 1500 1000 500 0 40 diode IGBT MWI300-12E9 10000 ...

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