BSM150GB120DN2 Infineon Technologies, BSM150GB120DN2 Datasheet - Page 10

• Manufacturer Part Number: BSM150GB120DN2
• Description: IGBT Modules 1200V 150A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM150GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 210 A
• Gate-emitter Leakage Current: 320 nA
• Power Dissipation: 1.25 KW
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge2
• Ic (max): 150.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
Anhang C-Serie
Appendix C-series
Gehäusemaße C-Serie
Package outline C-series
Gehäuse spezifische Werte
Housing specific values
stray inductance module
Modulinduktivität
BSM150GB120DN2
Appendix C-series
L
sCE
typ.
20
nH
Appendix_C-Serie_BSM150GB120DN2.xls
2001-09-20