BSM150GB120DN2 Infineon Technologies, BSM150GB120DN2 Datasheet - Page 2

• Manufacturer Part Number: BSM150GB120DN2
• Description: IGBT Modules 1200V 150A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM150GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 210 A
• Gate-emitter Leakage Current: 320 nA
• Power Dissipation: 1.25 KW
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge2
• Ic (max): 150.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 150 GB 120 DN2
Electrical Characteristics, at T
Parameter
Static Characteristics
Gate threshold voltage
V
Collector-emitter saturation voltage
V
V
V
V
Gate-emitter leakage current
V
AC Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Zero gate voltage collector current
GE
GE
GE
CE
CE
GE
CE
CE
CE
CE
= V
= 15 V, I
= 15 V, I
= 1200 V, V
= 1200 V, V
= 20 V, V
= 20 V, I
= 25 V, V
= 25 V, V
= 25 V, V
CE,
I
C
C
C
C
GE
GE
GE
CE
= 6 mA
= 150 A, T
= 150 A, T
= 150 A
GE
GE
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, T
= 0 V, T
j
j
= 25 °C
= 125 °C
j
j
= 25 °C
= 125 °C
j
= 25 °C, unless otherwise specified
2
Symbol
V
V
I
I
g
C
C
C
CES
GES
fs
GE(th)
CE(sat)
iss
oss
rss
min.
-
-
-
-
-
-
-
-
4.5
62
Values
typ.
-
-
5.5
2.5
3.1
2
8
11
1.6
0.6
max.
-
-
-
-
-
6.5
3
3.7
2.8
320
Oct-21-1997
Unit
V
mA
nA
S
nF