BSM50GD120DN2E3226 Infineon Technologies, BSM50GD120DN2E3226 Datasheet

BSM50GD120DN2E3226

Manufacturer Part Number

BSM50GD120DN2E3226

Description

IGBT Modules N-CH 1.2KV 50A

Manufacturer

Infineon Technologies

Datasheets

1.BSM50GD120DN2E3226.pdf (10 pages)

2.BSM50GD120DN2E3226.pdf (9 pages)

3.BSM50GD120DN2E3226.pdf (9 pages)

Specifications of BSM50GD120DN2E3226

Configuration

Hex

Collector- Emitter Voltage Vceo Max

1200 V

Collector-emitter Saturation Voltage

2.5 V

Continuous Collector Current At 25 C

50 A

Gate-emitter Leakage Current

200 nA

Power Dissipation

350 W

Maximum Operating Temperature

+ 150 C

Maximum Gate Emitter Voltage

20 V

Mounting Style

Screw

Package / Case

EconoPACK 2

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSM50GD120DN2E3226

Manufacturer:

EUPEC

Quantity:

492

Company:

Meier Automation Equipment Co., Limited

Part Number:

BSM50GD120DN2E3226

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

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2006-02-01

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